Enhanced grain growth in polycrystalline CuInSe2 using rapid thermal processing

Albin, D.; Mooney, G.D.; Duda, A.; Tuttle, J. R.; Matson, R.; Noufi, R.

doi:10.1016/0379-6787(91)90036-o

Cited by 18 publications

(13 citation statements)

References 11 publications

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“…The approach of this study differs from that of previously reported RTP approaches, which employ elemental precursor films [19,20] or attempt direct CIS recrystallization to increase grain size [21]. Conventional processes that synthesize CIS films under reaction conditions closer to equilibrium can be divided into selenization and recrystallization categories.…”

Section: Conventional and Novel Reaction Pathwaysmentioning

confidence: 64%

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Anderson¹

1999

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Section: Conventional and Novel Reaction Pathwaysmentioning

confidence: 64%

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Anderson¹

1999

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“…The importance of a Cu-rich growth period has been the subject of some disagreement in the literature, with various studies confirming its importance, 12,20,21,22 and others finding it important only under specialized circumstances. 6,7,8 Since the Cu-rich period enhances growth kinetics via existence of liquid copper selenide, it is therefore surmised that Curich growth is most important in situations where grain growth encounters other unfavorable conditions, such as fast deposition rates, low temperatures, or unoptimized supply of Na.…”

Section: B Deposition Temperature and Maximum Cu Ratiomentioning

confidence: 99%

Tolerance of Three-Stage CIGS Deposition to Variations Imposed by Roll-to-Roll Processing: Phase II Annual Report, May 2003--May 2004

Beck¹,

Repins²

2004

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Co-evaporation of CuIn x Ga 1-x Se 2 (CIGS) via two-stage and three-stage processes has been used in a variety of laboratories throughout the world to produce small-area devices with efficiencies greater than 15%. Thus, these deposition methods have come to be viewed as laboratory standards for the formation of CIGS absorbers used in respective photovoltaic devices. Although quite successful and relative easy to implement on a small R&D scale, scale-up to a commercially viable level proves to be rather challenging, as a number of conditions are encountered during continuous manufacturing that differ from the laboratory process. Such differences include both those imposed by continuous processing of moving substrates, and those implemented to decrease costs and increase throughput. It is therefore beneficial to understand the tolerance of the established laboratory processes to variations in deposition procedures. Research under this program consists of four basic parts to examine the tolerance of the established laboratory process to variations in deposition procedures: 1. Setting up the National Renewable Energy Laboratory (NREL)-developed three-stage CIGS laboratory process in a bell jar. (Phase I) 2. Characterizing the GSE roll-to-roll production chambers and device finishing steps in terms of the variables important to the laboratory processes. (Phase II) 3. Using the bell jar system to step incrementally from the NREL process to the conditions experienced by a sample during manufacturing, and characterizing the resulting films and devices. (Phase II and III) 4. Applying the process sensitivity information gained from the bell jar system to the production systems to realize improved device performance, yield, and process robustness. (Phase II and III) Work during Phase II progressed in three major areas: production system characterization, quantification of process sensitivities in the bell jar, and application of results to the production roll-coaters. To form a complete picture of conditions in the production systems, metals flux profiles as a function of Se pressure were documented, Se impingement rates were derived from sensor data, and thermocouple data was used to estimated temperature profiles. In the bell jar, the impact of the following process variations on device performance were quantified: CIGS cool-down rate, cool-down Se flux, venting temperature, shortened time between venting and CdS, maximum Cu ratio, and final Cu ratio. Related to production systems, the following topics were investigated: process robustness and device performance as a function of maximum and final Cu ratio, real-time sensing of maximum Cu ratio, effect of processing delays between CIGS and CdS, transparent conducting oxide stability with exposure to damp heat, and improved junction formation via thioacetamide treatment. Phase III tasks will build on this year's results: In the bell jar, several process sensitivity investigations will be concluded, and some new ones begun. These investigations will include use of less expen...

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“…Various sintering mechanisms can circumvent the porous structure. In vacuum based deposition approaches the Cu‐rich growth accompanied by the formation of a liquid or quasi‐liquid Cu‐Se phase can act as a fluxing agent enhancing grain growth in CIGS and CZTSe . Recently it was reported that the Zn‐rich growth of co‐evaporated CZTSe has a similar effect on grain size as the Cu‐rich growth .…”

Section: Introductionmentioning

confidence: 99%

Large-grained Cu₂ZnSnS₄layers sintered from Sn-rich solution-deposited precursors

Sutter‐Fella

Uhl

Romanyuk

et al. 2014

Phys. Status Solidi A

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Cu2ZnSnS4 (CZTS) layers are deposited by a direct solution coating of metal salts dissolved in dimethyl sulfoxide (DMSO) and thiourea as sulphur source. An intentional Sn‐rich precursor is used and the influence of reactive and inert atmosphere on the layer morphology is investigated during high temperature sintering. Larger grain growth is observed when annealing the precursor in inert N2 atmosphere as compared to reactive sulphur atmosphere. An initial Sn‐rich precursor composition with Zn/Sn < 1 promotes the grain growth while Sn leaves the sample during crystallization ending up with a final Zn‐rich (Zn/Sn > 1) layer composition.

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Enhanced grain growth in polycrystalline CuInSe2 using rapid thermal processing

Cited by 18 publications

References 11 publications

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Tolerance of Three-Stage CIGS Deposition to Variations Imposed by Roll-to-Roll Processing: Phase II Annual Report, May 2003--May 2004

Large-grained Cu₂ZnSnS₄layers sintered from Sn-rich solution-deposited precursors

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Enhanced grain growth in polycrystalline CuInSe2 using rapid thermal processing

Cited by 18 publications

References 11 publications

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Tolerance of Three-Stage CIGS Deposition to Variations Imposed by Roll-to-Roll Processing: Phase II Annual Report, May 2003--May 2004

Large-grained Cu2ZnSnS4layers sintered from Sn-rich solution-deposited precursors

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Large-grained Cu₂ZnSnS₄layers sintered from Sn-rich solution-deposited precursors