ITO/SiOx:H stacks for silicon heterojunction solar cells

Herasimenka, Stanislau; Dauksher, William J.; Boccard, Mathieu; Bowden, Stuart

doi:10.1016/j.solmat.2016.05.024

Cited by 54 publications

(37 citation statements)

References 14 publications

(13 reference statements)

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“…Reducing the rear-side parasitic absorption would require inserting a thickenough low-refractive index layer between the silicon wafer and the metal layers. [33] In summary, we have shown the influence of the metal capping layer on MgF x /Mg electron-selective contact stacks. The 1.5 nm MgF x /20 nm Mg/100 nm Al as electron-selective contacts is applied in the proof of concept of dopant-free MLBC solar cells with a high conversion efficiency over 22.1%.…”

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confidence: 73%

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Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%

Lin

Zhong

et al. 2020

Physica Rapid Research Ltrs

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Contact recombination at the interface between the selective contact material and electrode interface is one of the most pressing issues limiting most photovoltaic technologies. The results indicate that the high work function of the capping contact metal electrode has a negative influence on MgFx/Mg as the electron‐selective contact. Although the exact mechanism is still unclear, low‐work function metals appear to perform better. The contact stacks devised with these novel insights (1.5 nm MgFx/20 nm Mg/100 nm Al) and MoOx are applied as well to dopant‐free multilayer back‐contact (MLBC) solar cells to achieve an efficiency of 22.1% with an aperture area of 4.5 cm2 by directional evaporation for patterning.

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confidence: 73%

“…The J SC losses in the long‐wavelength region ranging from 1000 to 1200 nm are mostly caused by the parasitic absorption of the a‐Si:H (i)/MoO x /Ag and MgF x /Mg/Al/Ag layers. Reducing the rear‐side parasitic absorption would require inserting a thick‐enough low‐refractive index layer between the silicon wafer and the metal layers …”

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confidence: 99%

Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%

Lin

Zhong

et al. 2020

Physica Rapid Research Ltrs

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“…On the other hand, a plated metallization is intrinsically a low temperature process. Plated approaches using highly conductive and less expensive copper are currently investigated . The Cu‐based contacts can be electroplated simultaneously on both‐sides of the solar cells and TCOs like indium‐tin‐oxide (ITO) are good barrier to metals diffusion into silicon .…”

Section: Introductionmentioning

confidence: 99%

“…Plated approaches using highly conductive and less expensive copper are currently investigated. [12][13][14][15][16][17][18][19][20] The Cu-based contacts can be electroplated simultaneously on bothsides of the solar cells and TCOs like indium-tin-oxide (ITO) are good barrier to metals diffusion into silicon. [21] This manufacturing of plated bifacial SHJ solar cells intends to increase the contacts conductivity and reduces drastically the precious Ag consumption.…”

Section: Introductionmentioning

confidence: 99%

Native Oxide Barrier Layer for Selective Electroplated Metallization of Silicon Heterojunction Solar Cells

et al. 2019

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The metallization of silicon heterojunction (SHJ) solar cells by electroplating of highly conductive copper onto a multifunctional patterned metal layer stack is demonstrated. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making, and low material costs (almost Ag‐free). A PVD layer stack of copper and aluminum is deposited onto the cell subsequently to TCO deposition. The aluminum layer is patterned with a printed etchant and its native oxide on the remaining areas inhibits plating. The full area aluminum layer while electroplating supports plating current distribution and allows homogeneous plating height distributions over the cell. The NOBLE (native oxide barrier layer for selective electroplating) approach allows reaching a first encouraging SHJ solar cell efficiency of 20.2% with low contact resistivity.

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“…As a result, nc-SiO x :H is widely applicable as a window, back contact (BC) or intermediate reflector (IR) layer in various solar cell concepts. So far, ncSiO x :H has been utilized in photovoltaic devices like thin-film (TF) silicon solar cells [3,[9][10][11], multi-junction solar cells [12][13][14], crystalline silicon solar cells with diffused emitters [6], and silicon heterojunction (SHJ) solar cells [15][16][17][18]. Each of these applications requires specific optoelectronic properties in order to improve the overall spectral utilization and the response of the solar cell.…”

Section: Introductionmentioning

confidence: 99%

Versatility of doped nanocrystalline silicon oxide for applications in silicon thin-film and heterojunction solar cells

Richter

Smirnov

Lambertz

et al. 2018

Solar Energy Materials and Solar Cells

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To optimize the optical response of a solar cell, specifically designed materials with appropriate optoelectronic properties are needed. Owing to the unique microstructure of doped nanocrystalline silicon oxide, nc-SiO x :H, this material is able to cover an extensive range of optical and electrical properties. However, applying nc-SiO x :H thin-films in photovoltaic devices necessitates an individual adaptation of the material properties according to the specific functions in the device. In this study, we investigated the detailed microstructure of doped nc-SiO x :H films via atom probe tomography at the sub-nm scale, thereby, for the first time, revealing the three-dimensional distribution of the nc-Si network. Furthermore, n-and p-type nc-SiO x :H layers with various optical and electrical properties were implemented as a window, back contact, and an intermediate reflector layer in silicon heterojunction and multi-junction thin-film solar cells with a focus on the key aspects for adapting the material properties to the specific functions. Here, nc-SiO x :H effectively reduced the parasitic absorption and opened new possibilities for the photon management in the solar cells, thereby, demonstrating the versatility of this material. Remarkably, using our adapted nc-SiO x :H layers in distinct functions enabled us to achieve a combined short circuit current density of 15.1 mA cm -2 for the two a-Si:H sub-cells in an a-Si:H/a-Si:H/µc-Si:H triplejunction thin-film solar cell and an active area efficiency of 21.4 % was realized for a silicon heterojunction solar cell.2

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ITO/SiOx:H stacks for silicon heterojunction solar cells

Cited by 54 publications

References 14 publications

Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%

Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%

Native Oxide Barrier Layer for Selective Electroplated Metallization of Silicon Heterojunction Solar Cells

Versatility of doped nanocrystalline silicon oxide for applications in silicon thin-film and heterojunction solar cells

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