2011
DOI: 10.3367/ufne.0181.201111b.1157
|View full text |Cite
|
Sign up to set email alerts
|

Itinerant helimagnet MnSi

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
47
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 81 publications
(50 citation statements)
references
References 14 publications
3
47
0
Order By: Relevance
“…On the other hand, the Mn x Si 1-x (x≈0.5) thin layers grown on Si(001) or Al 2 O 3 (0001) substrates demonstrate the high-temperature (HT) ferromagnetism (FM) with the Curie temperature T c of the order of room temperature. [2][3][4] This fact is in contrast to the case of bulk ε-MnSi single crystal, where only the low-temperature (LT) FM was reported with T C ≈ 30 K. 8,9 The HT FM order at x 0.506 (that just corresponds to the single crystal ε-MnSi belonging to berthollides 9,10 ) was observed in the Mn x Si 1-x /Si(001) structures but at enough small Mn x Si 1-x film thickness less than one ε-MnSi monolayer. 2,11 This order is explained by the formation of c-MnSi phase with B2-like (CsCl) crystal structure stabilized with tetragonal distortion due to favorable lattice mismatch between the film and substrate.…”
Section: Introductionmentioning
confidence: 41%
See 2 more Smart Citations
“…On the other hand, the Mn x Si 1-x (x≈0.5) thin layers grown on Si(001) or Al 2 O 3 (0001) substrates demonstrate the high-temperature (HT) ferromagnetism (FM) with the Curie temperature T c of the order of room temperature. [2][3][4] This fact is in contrast to the case of bulk ε-MnSi single crystal, where only the low-temperature (LT) FM was reported with T C ≈ 30 K. 8,9 The HT FM order at x 0.506 (that just corresponds to the single crystal ε-MnSi belonging to berthollides 9,10 ) was observed in the Mn x Si 1-x /Si(001) structures but at enough small Mn x Si 1-x film thickness less than one ε-MnSi monolayer. 2,11 This order is explained by the formation of c-MnSi phase with B2-like (CsCl) crystal structure stabilized with tetragonal distortion due to favorable lattice mismatch between the film and substrate.…”
Section: Introductionmentioning
confidence: 41%
“…X-ray diffraction analysis reveals that textured ε-MnSi-like phase with the B20-type crystal structure dominates in both SG and DG type of films. While the ε-MnSi single crystal has the Curie temperature T C ≈ 30 K, 8,9 the studied Mn x Si 1-x films at x ≈ 0.52 exhibit HT FM with T C > 300 K accompanied by the manifestation of the positive sign of AHE. For SG grown Mn x Si 1-x films, it is found that at low temperature the essential contribution to the magnetization is given by LT FM phase with T C ≈ 46 K; at the same time, AHE changes the sign from the positive to negative at T ≤ 30K and film thickness d ≥ 90 nm.…”
Section: -12mentioning
confidence: 99%
See 1 more Smart Citation
“…[20][21][22] At temperatures 1-2 K above T C in ambient pressure, the spin correlation length ξ in MnSi becomes comparable to the pitch length l~18 nm of the helical spiral, transforming the ferromagnetic critical behavior into helical spin fluctuations. The process of stabilizing the helical fluctuations by I leads to weakly first-order behavior at T C , as detected by neutron scattering (chiral fluctuations), 10,[20][21][22] transport (sharp peaking in the T-derivative of the resistivity), 11,23 and specific heat 23 (a shoulder above T C with a sharp peak at T C ). In MuSR studies, this feature is manifest as a discontinuous change of the order parameter below T C 24 and a modification of the critical exponent above T C .…”
Section: Introductionmentioning
confidence: 99%
“…In this region, the heat capacity, magnetic susceptibility, temperature coefficient of electric resistance, etc., exhibit anoma lous behavior (see, e.g., [2]). The nature of this behav ior in the properties of MnSi is still not completely clear.…”
Section: Introductionmentioning
confidence: 99%