Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination

Abstract

The aim of this study is to determinate the electrical parameters of a white biased silicon solar cell submitted to an irradiation energy of particles (protons, helium, electrons and heavy ions). A theoretical study of the influence of irradiation energy on the photocurrent density, the photovoltage, the maximum power, as well as the maximum efficiency of the solar cell is presented through a resolution of the continuity equation relative to excess minority carrier. Then the expressions of the photocurrent density Jph, the photovoltage Vph, and the excess minority carrier recombination velocity at the back side Sb are established dependent of irradiation parameters φp, Kl respectively irradiation flux and intensity. In this work, we propose a method for determining the recombination velocity of the excess minority carrier at the junction Sf max corresponding to the maximum power point delivered by the photovoltaic generator under the influence of the irradiation. It is then obtained by calculating the derivative of the power with respect to the excess minority carrier recombination velocity Sf at the junction emitter-base. A transcendental equation solution is deduced as eigenvalue, leading to the junction recombination velocity of excess minority carrier and also yields the solar cell maximum conversion efficiency.

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

“…Excess minority carrier back surface recombination was studied with diffusion coefficient variation [43] [47] [48] [50] [51] [58], while solar cell remained in certain external conditions. Figure 5, below we represent the profiles of the excess minority carrier recombination velocity at the rear face (Sb2) as a function of the thickness of the base for different values of the diffusion coefficient for a given absorption coefficient (α).…”

Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

“… of illumination wavelength [20] [21] and illumination level n [22] [23] [24] or under dark [25];  of operating mode in particular, in static regime [26], the dynamic frequency regime [27] or transient dynamic regime [28] [29] [30]);  of external action by applied electromagnetic field [31] [32], or irradiation of nuclear particles [12] or a change in temperature [33]; In this work, the phenomenological parameters, such as the recombination velocity of the minority carrier in volume (τ), at the emitter-base junction (Sf) and at the rear face (Sb) of the thickness base (H), are studied. The optimum thickness (H) of the silicon solar cell base leading to the maximum short circuit current is determined according to the doping rate Nb (D), for a low level of illumination n. Figure 1 represents a silicon solar cell of type n + -p-p + under polychromatic illumination [34] [35].…”

n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

“…The imposed both, thickness (H) [25] and doping rate [26] are to be take into account. The applied external conditions such as, radiation flux and energy [27], temperature and magnetic field [28] [29] [30], influence the phenomenological parameters.…”