Iron-related deep levels in silicon

Wünstel, K.; Wagner, P.

doi:10.1016/0038-1098(81)90116-2

Cited by 69 publications

(25 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In more details this trap is made up by two contributions: trap T3a, detected in all the as-grown Cz samples (Cz-AG, W) whose Arrhenius plot is very close to the one of interstitial iron [12] and capture cross section is thermally activated [13]; and trap T3b, present in all the Cz thermally treated samples (#87, Cz-H, Cz-DEF, DD and DDTT), whose activation enthalpy is in good agreement with the level located at 0.33 eV from the valence band edge reported in [14] and related by the authors to a complex containing Fe and O. In as grown samples (W and Cz-AG) the shallow trap related to FeB pair has also been detected [7].…”

Section: Trap T3supporting

confidence: 82%

Electronic states related to dislocations in silicon

Cavalcoli

Cavallini

2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Dislocations and impurities in silicon, even though studied since many years, are now subject of a renewed interest. Moreover, many question related to dislocation-related electronic states remain still unsolved. The present contribution reviews several results, obtained by the authors, on dislocation impurity interactions and their effects on the electronic properties of defect states in silicon. Dislocations introduced by plastic deformation and oxygen precipitation in p-type Czochralski (Cz) silicon have been investigated by junction spectroscopy methods. A deep hole trap, named T1, has been associated to dislocationrelated impurity centers, while additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms. Moreover, experimental results obtained by junction spectroscopy assessed the existence of dislocation related shallow states. These were found to be located at 70 and 60 meV from the valence and conduction band edge, respectively.1 Introduction Light emission from Si is strongly inefficient as band-to-band optical emissions are highly improbable and most of the excited electron hole pairs recombine non-radiatively. Nevertheless, there is a strong demand for an optical emitter compatible with standard silicon-based ultra-large-scale integration technology. For this reason since 1990 many strategies, reviewed in [1], have been employed to overcome these materials limitations and to obtain efficient light emission from Si. One of the most successful is based on the modification of free carrier properties by quantum confinement effects, firstly obtained by the use of porous Si [2], then by the controlled production of Si nanocrystals in a SiO 2 matrix [3]. Another approach is based on the suppression of non-radiative recombination centers using for the device fabrication high quality substrates and defect passivation procedures [4].Among the various attempts very recently made in order to increase the efficiency of radiative transitions a significant result was obtained by defect engineering procedures, i.e. by employing dislocations as light emission sources [5]. It was, in fact, demonstrated that using an appropriate impurity gettering process followed by the dislocation passivation one could achieve a large enhancement of the radiative transitions with respect to the non-radiative ones.Therefore dislocations, although studied since many years, are still subject of strong interest. Moreover, their electronic states are far to be completely understood. One of the main subjects, requiring further investigations, is related to dislocation-related shallow bands. Their existence has been predicted by theory and modeling, it has been related with several experimental findings [6], but only recently directly experimentally observed by junction spectroscopy [7]. On the contrary, several deep levels are often found to be related to dislocations. Obviously, contamination with transition metals, oxygen precipitation, and impurity-dislocation interaction,...

show abstract