2003
DOI: 10.1016/j.physb.2003.09.200
|View full text |Cite
|
Sign up to set email alerts
|

Iron disilicide formed in a-Si〈Fe〉 thin films by magnetron co-sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2005
2005
2011
2011

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 10 publications
0
1
0
Order By: Relevance
“…Generally, the thin-film composition relates to the sputtering atoms ratio in magnetron sputtering process. The sputtering atoms ratio is related to the threshold energy of target element and sputtering power [8][9][10]. The homogeneity of thin-film is connected to the rotating velocity of substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Generally, the thin-film composition relates to the sputtering atoms ratio in magnetron sputtering process. The sputtering atoms ratio is related to the threshold energy of target element and sputtering power [8][9][10]. The homogeneity of thin-film is connected to the rotating velocity of substrate.…”
Section: Introductionmentioning
confidence: 99%