Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Miquita, Douglas R.; Paniago, R.; Rodrigues, Wagner Nunes; Moreira, M. V. B.; Pfannes, H.‐D.; Oliveira, A. G. de

doi:10.1016/j.tsf.2005.06.011

Cited by 11 publications

(6 citation statements)

References 35 publications

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“…Other components appear for longer milling time with higher relative intensities. Their hyperfine parameters are in good agreement with literature values published earlier published values [5,6] for amorphous FeSi 2 and [7,8] for -FeSi. At longer milling period, the relative intensity of ␣-FeSi 2 further increased.…”

Section: Resultssupporting

confidence: 91%

Mechanical alloying of Fe–Si and milling of α- and β-FeSi2 bulk phases

Dézsi

Fetzer

Bujdosó

et al. 2010

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 91%

Mechanical alloying of Fe–Si and milling of α- and β-FeSi2 bulk phases

Dézsi

Fetzer

Bujdosó

et al. 2010

Journal of Alloys and Compounds

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“…While metallic silicides have traditionally been the mainstay of research investigations, the interest in semiconducting silicides has significantly grown in recent years. [4][5][6][7][8][9] The optical and electrical properties of semiconducting ␤-FeSi 2 have been widely investigated. 1 Despite the fact that some transformation temperatures in the Fe-Si binary phase diagram are not entirely established due to the complexity of the system, it is well known that there are two main stable phases for FeSi 2 : the semiconducting ␤ phase at low temperature and the metallic ␣ phase at high temperature.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical characterization of sputter-deposited FeSi2 and its evolution with annealing temperature

Tan

Pey

2008

Journal of Applied Physics

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Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering Optical and electrical properties of sputter-deposited FeSi 2 thin films on p-Si͑100͒ and SiO 2 / p-Si͑100͒ substrates as well as their evolution with rapid thermal annealing ͑RTA͒ temperature have been investigated. Optical absorption measurements were carried out to determine the absorption spectra of FeSi 2 based on the proposed optical absorption model for the double-layer and triple-layer structures. A direct band gap behavior was concluded for both amorphous and polycrystalline semiconducting FeSi 2 . An absorption coefficient in the order of 10 5 cm −1 at 1 eV and a band gap value of ϳ0.86 eV were obtained for the ␤-FeSi 2 . Hall effect measurements at room temperature indicate heavily doped and n-type conductivity for the FeSi 2 films on p-Si, whose residual carrier concentration was found to be closely correlated with the observed subgap optical absorption via band tailing. The carrier mobility was shown to increase with decreasing residual carrier concentration when the RTA temperature was increased.

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“…The fabrication of β-FeSi 2 thin films on the Si platform generally exploits the whole variety of techniques developed in microelectronics, including solid-state reaction, ion beam synthesis (IBS), electron beam evaporation, pulsed laser deposition (PLD), sputtering, and MBE [8,[40][41][42][43][44]. Nevertheless, it is possible to classify them into three main groups based on the dominant physical and chemical processes involved.…”

Section: Silicide Formationmentioning

confidence: 99%

“…Both polycrystalline and epitaxial β-FeSi 2 thin films have been synthesized by this approach [40,[45][46][47][48][49][50]. It was observed that an annealing temperature of 900 °C appears to be the upper limit for β-FeSi 2 formation, beyond which it may transform into the metallic α phase.…”

Section: Solid-state Diffusionmentioning

confidence: 99%

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Theoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cells

Tan¹

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Transition metal silicides have been studied extensively for many years due to their potential technological importance and applications. Recently, the semiconducting phase of iron disilicide (β-FeSi 2) has received considerable attention due to its potential applications in optoelectronic and microelectronic areas. This is attributed to its direct K. H. Tan iii which confirmed the theoretical predictions. A carrier concentration in a tunable range of 10 17 cm-3 and a mobility in the order of 100 cm 2 /Vs were consistently obtained. Using this knowledge, p-type B-doped β-FeSi 2 /n-Si heterojunction thin film solar cells were fabricated. The effects of various physical parameters on the output characteristics of the cells were investigated and found to have a direct influence on the cell performance.

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Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Cited by 11 publications

References 35 publications

Mechanical alloying of Fe–Si and milling of α- and β-FeSi2 bulk phases

Mechanical alloying of Fe–Si and milling of α- and β-FeSi2 bulk phases

Optical and electrical characterization of sputter-deposited FeSi2 and its evolution with annealing temperature

Theoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cells

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