Iridium silicide nanowires on Si(001) surfaces

Oncel, Nuri; Nicholls, Dylan

doi:10.1088/0953-8984/25/1/014010

Cited by 9 publications

(11 citation statements)

References 35 publications

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“…1a). Subsequently, a fraction of a monolayer (0.01-0.3) of Ir was deposited on the surface by resistively heating a 99.9% pure Ir wire 23 . During evaporation the sample was kept at room temperature.…”

Section: Discussionmentioning

confidence: 99%

“…These systems constitute the best candidates for model systems to study the exotic and intriguing phenomena of 1D electron systems. Fortunately, the heavy 5d-transition metals such as Pt and Au have a strong tendency to self-assemble into defect-free, straight, long and narrow nanowires on annealing, subsequent to deposition on semiconductor group IV (001) surfaces [16][17][18][19][20][21][22][23] . The Pt-and Au-induced nanowires, although different in nature, that is, in their structure [16][17][18][19][20][21][22] , share the property of being able to attain lengths of up to a few microns.…”

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confidence: 99%

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Electronically stabilized nanowire growth

et al. 2013

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Metallic nanowires show unique physical properties owing to their one-dimensional nature. Many of these unique properties are intimately related to electron-electron interactions, which have a much more prominent role in one dimension than in two or three dimensions. Here we report the direct visualization of quantum size effects responsible for preferred lengths of self-assembled metallic iridium nanowires grown on a germanium (001) surface. The nanowire length distribution shows a strong preference for nanowire lengths that are an integer multiple of 4.8 nm. Spatially resolved scanning tunneling spectroscopic measurements reveal the presence of electron standing waves patterns in the nanowires. These standing waves are caused by conduction electrons, that is the electrons near the Fermi level, which are scattered at the ends of the nanowire.

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

Electronically stabilized nanowire growth

et al. 2013

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“…Ir (iridium) has already been shown to form nanowires on Ge (001), Si (001), and Si (110) surfaces. [20][21][22] In this paper, we report Scanning Tunneling Microscopy/ Spectroscopy (STM/STS) data to reveal electronic properties of Ir-silicide nanowires alongside with ab-initio density functional theory (DFT) calculations to explain the origins of these electronic properties and the structure of Ir-silicide nanowires.…”

Section: Introductionmentioning

confidence: 99%

On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

Fatima

Oğuz

Çakır

et al. 2016

Journal of Applied Physics

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Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/ Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires. Published by AIP Publishing. [http://dx

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“…A quick survey of the literature provides us with numerous examples: Mg/Si(557) 59 , Si/Si(001) 60 , Mn/Si(001) [61][62][63][64][65] , CoSi 2 /Si 66 , Ga/Si(001) [67][68][69][70] , Sr/Si(111) 71 and Sr/Si(001) 72 , Ag+Au/Si(557), 44 Ir/Si(001) 73 , and so on.…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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Iridium silicide nanowires on Si(001) surfaces

Cited by 9 publications

References 35 publications

Electronically stabilized nanowire growth

Electronically stabilized nanowire growth

On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

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