Ionization Rates of Holes and Electrons in Silicon

Lee, C. A.; Logan, R. A.; Batdorf, R. L.; Kleimack, J.J.; Wiegmann, W.

doi:10.1103/physrev.134.a761

Cited by 460 publications

(89 citation statements)

References 23 publications

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“…This results from the high ratio of the electron-to-hole ionization rates favoring electron multiplication by a factor of 10 to 50 for the electric fields of importance. 6 The avalanche photodiodes combining the highest efficiency and speed (in the 800-to 900-nm wavelength range) with high uniform current gains and low excess noise are then con structed from silicon as n + -p -x -p + structures and operated at high re verse bias voltages with fully depleted p-x regions. In these devices, in cident light in the 800-to 900-nm range is mainly absorbed in the IT re gion.…”

Section: Design and Operationmentioning

confidence: 99%

Atlanta Fiber System Experiment: Planar Epitaxial Silicon Avalanche Photodiode

Melchior¹,

Hartman²,

Schinke³

et al. 1978

Bell System Technical Journal

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Section: Design and Operationmentioning

confidence: 99%

Atlanta Fiber System Experiment: Planar Epitaxial Silicon Avalanche Photodiode

Melchior¹,

Hartman²,

Schinke³

et al. 1978

Bell System Technical Journal

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“…In 1964 Lee, Logan et al [90] reinvestigated the kinetic energy ionisation rates for electrons and holes as there had been several inconsistences shown between previous work and more recent analysis by Baraff in 1962. In particular, a simplified analysis was combined with a refinement in the cleanliness of test diode growth and the use of a local multiplication uniformity rather than uniformity of emitted light approach.…”

Section: Microplasma Experimental Observations and Theoriesmentioning

confidence: 99%

“…By the middle of 1967, Emmons noted [61] that depending on the ratio of electron and hole ionisation rates, there need not be a reduction in the bandwidth of a diode due to avalanche multiplication, (as proposed by Read [74] in 1958 and Lee and Batdorf in 1964). These earlier works assumed that: (i) the electron, α n and hole α p ionisation rates were equal, (ii) the velocities were also equal and (iii) that Maxwell's time-varying electric field, polarisation "displacement current" could be neglected.…”

Section: Microplasma Experimental Observations and Theoriesmentioning

confidence: 99%

Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

Fisher¹

2018

Photon Counting - Fundamentals and Applications

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The historical development of technology can inform future innovation, and while theses and review articles attempt to set technologies and methods in context, few can discuss the historical background of a scientific paradigm. In this chapter, the nature of the photon is discussed along with what physical mechanisms allow detection of single-photons using solid-state semiconductor-based technologies. By restricting the scope of this chapter to near-infrared, visible and near-ultraviolet detection we can focus upon the internal photoelectric effect. Likewise, by concentrating on single-photon semiconductor detectors, we can focus upon the carrier-multiplication gain that has allowed sensitivity to approach the single-photon level. This chapter and the references herein aim to provide a historical account and full literature review of key, early developments in the history of photodiodes (PDs), avalanche photodiodes (APDs), single-photon avalanche diodes (SPADs), other Geiger-mode avalanche photodiodes (GM-APDs) and silicon photo-multipliers (Si-PMs). As there are overlaps with the historical development of the transistor (1940s), we find that development of the p-n junction and the observation of noise from distinct crystal lattice or doping imperfections -called "microplasmas" -were catalysts for innovation. The study of microplasmas, and later dedicated structures acting as known-area, uniform-breakdown artificial microplasmas, allowed the avalanche gain mechanism to be observed, studied and utilised.

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“…The Keld ish solution attracted the attention because it tends to the Wolff relation (exp[-C/ζ 2 ]) at high fields and tends to a simp le exponential exp[-C'/|ζ|] (where C' is another constant) at moderate fields, which coincides with the experiment. In fact, the measurements of Chynoweth [74], Lee et al [77], Van Overstraten and Deman [78], Kotani and Kawazu [79], Maes [80] and Takayangi [81] showed that the impact ionization rate at moderate fields fo llo w a simp le exponential function. According to Grant's model [82], the electron impact ionization rate fo llo ws the following exponential relation:…”

Section: Impact Ionizati On Ratementioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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Ionization Rates of Holes and Electrons in Silicon

Cited by 460 publications

References 23 publications

Atlanta Fiber System Experiment: Planar Epitaxial Silicon Avalanche Photodiode

Atlanta Fiber System Experiment: Planar Epitaxial Silicon Avalanche Photodiode

Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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