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Four different film evaluation techniques, prism coupling, reflectance spectroscopy, ellipsometry, and mechanical measurement of a step height, have been compared by measuring the thickness and refractive index of thermally grown silicon dioxide and plasma-deposited silicon nitride films. The four methods have similar accuracies and precisions for measuring the film thickness; the agreement among the four methods is generally within _+0.01 ;~m for silicon dioxide films less than 0.6 ~m thick and within +--1.5% for thicker films. * Electrochemical Society Active Member. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.113.86.233 Downloaded on 2015-03-24 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.113.86.233 Downloaded on 2015-03-24 to IP Vol. 126, No. 9 ion scattering spectrometry. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.113.86.233 Downloaded on 2015-03-24 to IP

No abstract

We discuss magnetic properties of iron-garnet films and the use of these films as film-waveguide optical switches. Our experimental study involves the observation of magnetic domains, measurements of Faraday rotation constants, coercive forces and anisotropy fields, and a detailed investigation of the switching process between 0 and 300 MHz. Our theoretical study includes magneto-optics in film waveguides, and analysis of the serpentine circuit, and an extensive calculation of the motion of the magnetization. For low driving fields, the process of optical switching is the formation of periodic domains and the subsequent motion of domain walls. For higher driving fields, the process is rotation of the magnetization in unison. The switching field required for 100% modulation is several times the anisotropy field in the film, which can be as small as 0.1 Oe.

The refractive index of an anodically grown oxide on GaAs has been measured throughout the visible and near infrared and the data fitted to a single oscillator Sellmeier equation. Accurate refractive-index data is required for possible use of anodic oxides as antireflection coatings on GaAs electro-optic devices. For 11 as-grown oxides the measured refractive index for λ=632.8 nm was n=1.7786±0.0138, while for five annealed oxides (259 °C for 1 h in N2) n=1.7469±0.0095. The calculated refractive index of annealed oxides at the emission wavelengths of interest for GaAs-AlGaAs fiber communication sources is n=1.724±0.006 at λ=890±20 nm.