2023
DOI: 10.1016/j.nanoen.2023.108449
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Ionic liquids tailoring crystal orientation and electronic properties for stable perovskite solar cells

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Cited by 28 publications
(39 citation statements)
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“…On the other hand, trap-assisted filling recombination has a close relationship with trap density, and the change in trap density was confirmed through space-charge-limited current (SCLC) analysis. SCLC analysis was carried out by recording the dark J – V curves of an electronic-only device consisting of ITO/SnO 2 /perovskite/ETL/Au (Figure c), and the defect density was calculated as follows , N normald normale normalf normale normalc normalt normals = 2 ε ε normalo 0.25em V normalT normalF normalL e L 2 where N defects is the density of traps, ε stands for the dielectric constant (28.8 for perovskite), ε 0 indicates the vacuum permittivity, V TFL shows the trap-filled limited voltage, e is the elementary charge, and L represents the perovskite film’s thickness (∼500 nm), respectively . The V TFL values of the control and EDTA chemical bridge-mediated ETLs were determined to be 0.31 V and 0.20 V, and the corresponding defect density values were calculated as 3.95 × 10 15 and 2.55 × 10 15 cm –3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…On the other hand, trap-assisted filling recombination has a close relationship with trap density, and the change in trap density was confirmed through space-charge-limited current (SCLC) analysis. SCLC analysis was carried out by recording the dark J – V curves of an electronic-only device consisting of ITO/SnO 2 /perovskite/ETL/Au (Figure c), and the defect density was calculated as follows , N normald normale normalf normale normalc normalt normals = 2 ε ε normalo 0.25em V normalT normalF normalL e L 2 where N defects is the density of traps, ε stands for the dielectric constant (28.8 for perovskite), ε 0 indicates the vacuum permittivity, V TFL shows the trap-filled limited voltage, e is the elementary charge, and L represents the perovskite film’s thickness (∼500 nm), respectively . The V TFL values of the control and EDTA chemical bridge-mediated ETLs were determined to be 0.31 V and 0.20 V, and the corresponding defect density values were calculated as 3.95 × 10 15 and 2.55 × 10 15 cm –3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, trap-assisted filling recombination has a close relationship with trap density, and the change in trap density was confirmed through space-charge-limited current (SCLC) analysis. SCLC analysis was carried out by recording the dark J−V curves of an electronic-only device consisting of ITO/SnO 2 /perovskite/ETL/Au (Figure 6c), and the defect density was calculated as follows 55,56 N V eL…”
Section: Eqe Absorption Efficiency ( ) Iqementioning
confidence: 99%
“…The defect-state density was then evaluated through the calculation of the trap-filled limit voltage (V TFL ) using the applicable equation. 54,55 N V qL…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…In order to conduct a detailed quantitative investigation into the defect-state density of PVK films containing varying amounts of BP, we employed the space-charge-limited current (SCLC) model in a hole-only device with the following structure: ITO/PEDOT: PSS/PVK/hydrophobic PEDOT: PSS/Au. The defect-state density was then evaluated through the calculation of the trap-filled limit voltage ( V TFL ) using the applicable equation. , …”
Section: Resultsmentioning
confidence: 99%
“…Additives that mix with precursors have been shown to effectively delay the crystallization process and, as a result, enhance homogeneous nucleation and crystallization kinetics. Zou et al have reported the underlying relationship among crystallization dynamics, charge carrier kinetics, device performance, and device operational stability under ambient conditions with the introduction of ionic liquid additives, which can control the crystal growth. The preferential corner up orientation in the perovskite film resulted in accelerated electron transport and extraction …”
Section: Introductionmentioning
confidence: 99%