Ionic-liquid gating controls anomalous hall resistivity of Co/Pt perpendicular magnetic anisotropy films

Wang, Yangping; Liu, Fufu; Cao, Cuimei; Zhou, Chenglong; Chai, Guozhi; Jiang, Changjun

doi:10.1016/j.jmmm.2019.165626

Cited by 5 publications

(2 citation statements)

References 36 publications

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“…4(a)] and B K0,K2 [see Fig. 4(b)], it appears that the anisotropy increases significantly with decreasing temperature (for out-of-plane magnetization loops see Supplementary Section SIV [42] and references [81][82][83][84][85][86][87][88][89][90]). For bulk cobalt, the magnetocrystalline anisotropy constants (both uniaxial K 0 and K 2 ) increase with decreasing temperature [91].…”

Section: A Vcma Measurementsmentioning

confidence: 99%

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Vermeulen

Swerts

Couet

et al. 2020

Phys. Rev. Materials

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To improve power efficiency and endurance of magnetic memory technologies, a voltage-controlled mechanism is desirable. The voltage control of magnetic anisotropy (VCMA) effect in MgO stacks is a promising option, however, its strength is too low for memory applications. Replacing the standard MgO layer by an oxide with a higher permittivity κ may help improve the VCMA strength. We demonstrate a VCMA effect up to ξ = 75 fJ/Vm at room temperature in a CoࢨPt bilayer grown on atomic layer deposited (ALD) high-κ SrTiO 3 (STO). After treating the STO surface with isopropanol, a thin CoO x interfacial layer is observed, enabling VCMA. Upon cooling down from room temperature to 200 K, the VCMA effect strength increases by a factor of two. This increase is incompatible with the expected Arrhenius temperature dependence for an ionic effect and thus we argue that the observed VCMA effect is electronic. Electronic VCMA is desirable for adequate memory endurance, and hence the approach proposed here has great potential for applications.

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Section: A Vcma Measurementsmentioning

confidence: 99%

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Vermeulen

Swerts

Couet

et al. 2020

Phys. Rev. Materials

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“…The flat portion (I) is an electrostatically doped region, and the steep part (II) is the electrochemical reaction region. [26,27] The accumulation of ions at the interface of the latter is greater than that of the former.…”

Section: Resultsmentioning

confidence: 98%

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures*

Wang¹,

Liu²,

Zhou³

et al. 2020

Chinese Phys. B

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We report a tunable transverse magnetoresistance of the planar Hall effect (PHE), up to 48% in the Ni80Fe20/HfO2 heterostructures. This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage, which exhibits a gate-dependent PHE. Moreover, in the range of 0-V to 1-V gate voltage, transverse magnetoresistance of PHE can be continuously regulated. Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage. This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.

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Electric-field modulation of magnetic domain in (Co/Pt)/PMN–PT heterostructure with perpendicular magnetic anisotropy

Zhou,

Zhu,

et al. 2023

Appl. Phys. A

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Ionic-liquid gating controls anomalous hall resistivity of Co/Pt perpendicular magnetic anisotropy films

Cited by 5 publications

References 36 publications

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures*

Electric-field modulation of magnetic domain in (Co/Pt)/PMN–PT heterostructure with perpendicular magnetic anisotropy

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Ionic-liquid gating controls anomalous hall resistivity of Co/Pt perpendicular magnetic anisotropy films

Cited by 5 publications

References 36 publications

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures*

Electric-field modulation of magnetic domain in (Co/Pt)/PMN–PT heterostructure with perpendicular magnetic anisotropy

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Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures*