Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures*

Abstract

We report a tunable transverse magnetoresistance of the planar Hall effect (PHE), up to 48% in the Ni80Fe20/HfO2 heterostructures. This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage, which exhibits a gate-dependent PHE. Moreover, in the range of 0-V to 1-V gate voltage, transverse magnetoresistance of PHE can be continuously regulated. Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage. This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.

Planar Hall Effect Modified by the Evolution of Magnetic Domain States

“…The studies on the PHE were mainly focused on the improvement of the performances including response time, stability, field linearity, and sensitivity, by regulating material composition, modifying surface, and designing geometric shape. − In fact, the regulations based on the evolution of magnetic domain states are expected to induce an intrinsic change for the PHE since it comes from the interaction between the spin–orbit coupling and the anisotropy caused by spin-dependent s - d scattering, especially in a nanoparticle film, which is very sensitive to the magnetic domain structure. However, there are few studies on the modification of the PHE by switching between multi-domain (MD) and single-domain (SD) because it is difficult to realize for nanoparticle films prepared by conventional sputtering methods .…”