Ion-implantation issues in the formation of shallow junctions in germanium

Simoen, Eddy; Satta, Alessandra; D'Amore, Antonio; Janssens, Tom; Clarysse, Trudo; Martens, Koen; Jaeger, Danny; Benedetti, Alessandro; Hoflijk, I.; Brijs, Bert; Meuris, Marc; Vandervorst, Wilfried

doi:10.1016/j.mssp.2006.08.067

Cited by 120 publications

(72 citation statements)

References 27 publications

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“…3. As shown here and suggested by Simoen et al [9], very low levels of damage remain following implantation at 500°C. From this low damage level starting point, good activation of phosphorus is achieved due to the low level of stable defect complexes.…”

Section: Phosphorus Electrical Activationsupporting

confidence: 86%

Temperature-dependant study of phosphorus ion implantation in germanium

Razali

Smith

Jeynes

et al. 2012

AIP Conference Proceedings

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Abstract. We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

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Section: Phosphorus Electrical Activationsupporting

confidence: 86%

Temperature-dependant study of phosphorus ion implantation in germanium

Razali

Smith

Jeynes

et al. 2012

AIP Conference Proceedings

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“…However, the knowledge base and understanding of CMOS-related processing of Ge is still relatively small compared to that of Si. Pre-amorphization using self-implantation to create a continuous amorphous (a) layer is a commonly used processing step which reduces channeling effects and results in higher activation of subsequently implanted dopants during solid-phase epitaxial growth (SPEG) [4][5][6][7]. Moreover, understanding the SPEG process is crucial to optimizing the performance of CMOS devices [8,9].…”

Section: Introductionmentioning

confidence: 99%

Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Darby

Yates

Rudawski

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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“…1 A few hindrances exist, however, including the poor quality of the native surface oxide GeO 2 2 and the difficulty in obtaining high-enough n-type carrier concentrations for ultra-shallow junctions. 3 While the insulation issue has essentially been resolved by introducing high-j dielectrics as a replacement for SiO 2 a decade ago 4 (directly applicable to Ge), the doping limitations are still to be overcome. Hence, it is imperative to have more profound knowledge on the formation of defects and their role in the carrier compensation of Ge.…”

mentioning

confidence: 99%