Temperature-dependant study of phosphorus ion implantation in germanium

Razali, M. Anas; Smith, Andrew J.; Jeynes, C.; Gwilliam, R.

doi:10.1063/1.4766522

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…Phosphorus ion implantation into Ge at 500 C was reported. 19 Sheet resistance was found to be lower in annealed Ge implanted at 500 C relative to RT implanted Ge. Heated implantation of phosphorus into GeSn has not been reported yet.…”

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confidence: 94%

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

D'Costa

Wang

et al. 2014

Applied Physics Letters

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We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transport properties similar to those of heated Ge implants. The far-infrared dielectric function of as-implanted Ge and GeSn shows the typical free carrier response which can be described by a single Drude oscillator. Bulk Ge-like critical points E1, E1 + Δ1, E0', and E2 are observed in the visible-UV dielectric function of heated Ge and GeSn indicating single crystalline quality of the as-implanted layers. Although the implantation at 400 °C recovers crystallinity in both Ge and GeSn, an annealing step is necessary to enhance the carrier activation.

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confidence: 94%

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

D'Costa

Wang

et al. 2014

Applied Physics Letters

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“…The parameters such as dose (cm −2 ), energy (keV), diffusion time (min), and temperature ( • C) play a vital role in forming the emitter region with desired properties such as peak doping concentration and thickness of the emitter region. Though the research community has provided several experimental studies for the ion-implantation process [25,[27][28][29], none of the theories reported in the literature have considered the detailed and collective influence of phosphorus ion-implanted parameters for the emitter formation in the PERC solar cell. Further, the optimization of process-related parameters by using an experimental approach would turn out to be costly [30].…”

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confidence: 99%

Process and device simulations aimed at improving the emitter region performance of silicon PERC solar cells

Kashyap¹,

Madan²,

Pandey³

et al. 2021

J. Micromech. Microeng.

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Achieved levels of Silicon-based passivated emitter and rear cell (PERC) solar cells' laboratory and module-level conversion efficiencies are still far from the theoretically achievable Auger limit of 29.4% for silicon solar cells, prominently due to emitter recombination and resistive losses. The emitter region in PERC devices is formed by using either ion implantation followed by a diffusion process or POCl3 diffusion. In ion-implanted emitter-based PERC, the process variables such as dose, energy, diffusion time, and temperature play a vital role in defining the characteristics of the emitter region. Detailed investigation of these parameters could provide a pathway to mitigate the recombination as well as resistive losses; however, it requires a considerable budget to optimize these parameters through a purely experimental approach. Therefore, advanced industrial standard process and device simulation are perceived in this work to carry out the comprehensive study of process variables. Investigation of ion implantation and diffusion process parameters on the PV performance of an upright pyramid textured, industrial standard stacked dielectric passivated PERC solar cell is carried out to deliver 22.8% conversion efficiency with improved PV parameters such as short circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 686 mV, and fill-factor (FF) of 81.54% at optimized implantation and diffusion parameters, such as implantation dose of 5×1015 cm-2 with energy 30 keV followed 950 oC diffusion temperature and 30 min of diffusion time. The performance of the optimized PERC device is compared with already published large area screen printed contact-based device. This work may open up a window for the experimental work to understand the influence of process parameters on the emitter region to develop the highly efficient PERC solar cell in the future.

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Self-crystallization and reduced contact resistivity by hot phosphorus ion implant in germanium-tin alloy

Wang

Liu

Gong

et al. 2014

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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Temperature-dependant study of phosphorus ion implantation in germanium

Cited by 3 publications

References 4 publications

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Process and device simulations aimed at improving the emitter region performance of silicon PERC solar cells

Self-crystallization and reduced contact resistivity by hot phosphorus ion implant in germanium-tin alloy

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