Ion-implantation doping of semiconductors

Large, L. N.; Bicknell, R. W.

doi:10.1007/bf00752224

Cited by 66 publications

(13 citation statements)

References 20 publications

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“…; 1014 ions cm-2 resulted in an amorphous surface phase approximately to the depth of the random penetration of ions. Parsons (1965) and Large and Bicknell (1967) confirmed that the damaged layer was confined to the front bombarded surface.…”

Section: Secondary Negative Ionsmentioning

confidence: 70%

“…The majority of these displaced atoms are contained within an approximately sphericalvolume. Spherical damaged regions of 50 to 100 A diameter representing roughly 50 displaced lattice atoms have been observed in Si by Mazey et al (1966), (1968) and Large and Bicknell (1967), and in Ge by Bacchilega et al (1965) and Parsons (1965) when samples, thinned prior to ion bombardment with 80 to 100keV ions, were examined in the electron microscope. Parsons (1965) deduced that the individual damaged regions had a structure which was amorphous and less dense than the crystalline matrix in which they were located.…”

Section: Secondary Negative Ionsmentioning

confidence: 91%

“…Jech and Kelly (1969) used the phenomenon of inert gas release as a marker for studying the annealing of damage in single crystals of Ge and Si subjected to 10keV Kr+ ion bombardment. Mazey et al (1966), and in more detail Mazey et al (1968), Large and Bicknell (1967), Dearnaley et al (1969), and Irving (1969) have used the electron microscope and determined the annealing behaviour of ion bombardment damage in pre-thinned Si samples. In most cases doping ions were used to determine the extent of damage produced in the process of ion implantation (see SECTION 2.3.2.)…”

Section: Secondary Negative Ionsmentioning

confidence: 99%

“…In intermediate -55-thickness regions, micro-twinning sometimes occurred in the bombarded areas. This was more likely when (111) Si slAces were examined owing to the relative ease of double position twinning about the (111) normal (Large and Bicknell 1967).…”

Section: Secondary Negative Ionsmentioning

confidence: 99%

“…The loops finally annealed at temperatures in excess of 1000°C (Dearnaley et al 1969). Large and Bicknell (1967) found that beneath regions which exhibited micro-twinning, there was again a high density of dislocation loops, some approximately circular and others which formed very long narrow dipoles, the type and size of which was dependent on the bombardment and annealing schedule. Analysis of the loops indicated they were of interstitual or vacancy type.…”

Section: Secondary Negative Ionsmentioning

confidence: 99%

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Growth of epitaxial silicon layers by ion beam sputtering

Unvala

Pearmain

1970

J Mater Sci

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An ion beam sputtering technique has been developed which made possible the production of homo-epitaxial Si layers by sputtering for the first time. The A+ ion beam source was considerably modified from the initial design of Hill and Nelson (1965) to give the purity needed for the production of semiconductor layers without mass analysis of the ion beam. Typically, a 12keV 4mA beam of A+ ions struck a Si target at 60° incidence and ejected sputtered atoms were deposited at a rate of 200 A/min on a heated Si(111) substrate placed just above the target. Epitaxial layers were grown at temperatures above about 700°C and the structural quality of these layers was evaluated by transmission electron microscopy. Layers grown at temperatures in excess of 900°C contained only dislocation defects normally to a density of about 8x109 cm-2, whereas epitaxial layers grown at lower temperatures also exhibited stacking faults and microtwinning. The existence of defects in epitaxial layers has been correlated with the severity of bombardment of the substrate during deposition by secondary ions from the target. In all cases, the bombardment conditions were severe enough to continually transform a thin 100 A thick surface region of the newly-deposited sputtered layer to a disordered state. The subsequent reordering characteristics of this disordered surface controlled not only the prominence of individual defects in any epitaxial layer but also whether a layer was single crystal. Electrical properties of epitaxial layers were also strongly dependent on bombardment conditions allowing only high resistivity N-type layers to be grown independent of target conductivity-type and resistivity.The ion beam sputtering properties of Si and GaAs have also been investigated. The similarity in results for single crystal targets to those for polycrystalline targets was again attributed to ion-bombardment-induced surface disorder. Stoichiometric layers of GaAs could only be obtained from polycrystaline targets.

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Section: Secondary Negative Ionsmentioning

confidence: 70%

Section: Secondary Negative Ionsmentioning

confidence: 91%

Section: Secondary Negative Ionsmentioning

confidence: 99%

Section: Secondary Negative Ionsmentioning

confidence: 99%

Section: Secondary Negative Ionsmentioning

confidence: 99%

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Growth of epitaxial silicon layers by ion beam sputtering

Unvala

Pearmain

1970

J Mater Sci

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Kinetics of recrystallization in ion-implanted silicon layers

Prasad

Beserman

Germain

et al. 1976

Phys. Stat. Sol. (a)

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The kinetics of recrystallization of a silicon layer rendered amorphous by the implantation of 1015 phosphorous ions cm−2 of energy 80 keV is studied during isothermal warm‐up with the help of Raman spectroscopy. The results indicate that this recrystallization occurs through a controlled growth at the interface between the amorphous and crystalline phases. The sharp change of the electrical conductivity which takes place at the crystallization temperature is correlated with the fraction which is crystallized.

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Influence of nitrogen ion implantation on the electrical transport properties of inte and InSe thin films

Sastry¹,

Reddy²

1983

Phys. Stat. Sol. (a)

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Amorphous and crystalline thin films of InTe and InSe are prepared by the discrete evaporation of the materials from a tantalum boat. Electrical conductivity and mobility are measured on these films. The films are implanted with nitrogen ions, with varying ion dosages and their electrical conductivity and mobility are measured again. The results show that the electrical conductivity and mobility are lowered on ion implantation, more so, when the ion dosage is high. This is explained in terms of the lattice damage caused by the bombardment of the energetic incident ion. The films are restored back partially to their original state by thermal annealing as observed from the conductivity and mobility data.

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Ion-implantation doping of semiconductors

Cited by 66 publications

References 20 publications

Growth of epitaxial silicon layers by ion beam sputtering

Growth of epitaxial silicon layers by ion beam sputtering

Kinetics of recrystallization in ion-implanted silicon layers

Influence of nitrogen ion implantation on the electrical transport properties of inte and InSe thin films

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