Influence of nitrogen ion implantation on the electrical transport properties of inte and InSe thin films

Abstract

Amorphous and crystalline thin films of InTe and InSe are prepared by the discrete evaporation of the materials from a tantalum boat. Electrical conductivity and mobility are measured on these films. The films are implanted with nitrogen ions, with varying ion dosages and their electrical conductivity and mobility are measured again. The results show that the electrical conductivity and mobility are lowered on ion implantation, more so, when the ion dosage is high. This is explained in terms of the lattice damage caused by the bombardment of the energetic incident ion. The films are restored back partially to their original state by thermal annealing as observed from the conductivity and mobility data.