Thin films of InTe formed by flash evaporation technique onto goldseal glass, freshly cleaved mica, and sodium chloride substrates, kept at room temperature (z 303K) in a wcuum of z 2.7 X Pa, are found to be amorphous. These films are subjected t o post deposition heat treatment, carried out through different annealing cycles, monitoring resistance simultaneously.The room temperature electrical resistivity is observed to increase in the initial heating cycles indicating annealing of defects and homogenizing of the film structure. I n the latter annealing cycles, crystallinity is setting in as revealed from the decrease in the room temperature electrical resistivity. Epitaxial growth is observed in thicker films after annealing. A decrease in resistivity of the order of lo5 is observed when the degree of crystallinity significantly increases. The structure of the films is determined by electron diffraction before and after this sudden change in electrical resistivity to correlate the observed change with the structure. Films are also formed onto the substrates kept a t higher temperatures to see the effect of substrate temperature on the structure and electrical properties. Hall mobility and thermoelectric power measurements are made on the crystalline indium telluride films. Es wird gefunden, daB diinne Schichten von InTe, die durch eine Blitz-Aufdampftechnik anf Gold-Glasanschmelzung, frisch gespaltenen Glimmer-und Natriumchloridsubstraten bei Zimmertemperatur (z 303 K ) in einem Vakuum von = 2,7 x P a hergestellt werden, amorph sind. Diese Schichten werden einer thermischen Nachbehandlung mit verschiedenen Temperungszyklen unterzogen, wobei gleichzeitig der Widerstand verfolgt wird. Es wird beobachtet, daB der elektrische Widerstand bei Zimmertemperatur bei den anfanglichen Temperungszyklen ansteigt, was die Ausheilnng von Defekten und die Homogenisierung der Schichtstruktur anzeigt. I n den spllteren Temperungszyklen beginnt die Ihistallisation, was durch den Abfall des Widerstands bei Zimmertemperatur nachgewiesen wird. Epitaktisches Wachstum wird in dickeren Schichten nach der Temperung beobachtet. Ein Abfall des Widerstandes von der GroBenordnung lo5 wird beobachtet, wenn der Kristallisationsgrad wesentlich zunim-mt. Die Struktur der Schichten wird durch Elektronenbeugung vor und nach dieser plotzlichen Anderung des elektrischen Widerstands bestimmt, um die beobachtete Anderung mit der Struktur zu korrelieren. Schichten werden auch auf die Substrate aufgebracht, die auf hoheren Temperatoren gehalten werden, um den EinfluB der Substrattemperatur auf die elektrischen Eigenschaftem und Struktur zu untersuchen. An den kristallinen Indiuintelluridschichteii werden Hallbeweglichkeits-und Thermospannongsmessungen durchgefuhrt.
Amorphous and crystalline thin films of InTe and InSe are prepared by the discrete evaporation of the materials from a tantalum boat. Electrical conductivity and mobility are measured on these films. The films are implanted with nitrogen ions, with varying ion dosages and their electrical conductivity and mobility are measured again. The results show that the electrical conductivity and mobility are lowered on ion implantation, more so, when the ion dosage is high. This is explained in terms of the lattice damage caused by the bombardment of the energetic incident ion. The films are restored back partially to their original state by thermal annealing as observed from the conductivity and mobility data.
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