Ion enhanced gas-surface reactions: A kinetic model for the etching mechanism

Gerlach-Meyer, U.

doi:10.1016/0039-6028(81)90282-x

Cited by 75 publications

(13 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To investigate the relationships between composition of gas phase and surface kinetics, we used the phenomenological model based on theory of active surface sites [28][29][30][31]. The model was based on such assumptions as: (1) only F atoms are effective in chemical reaction; (2) only Ar þ ions are effective in the sputtering process; (3) sputtering of the substrate is possible only when the incident ion impacts the clean surface; (4) all kinds of positive ions are effective for the ion-stimulated desorption of reaction products.…”

Section: Surface Kineticsmentioning

confidence: 99%

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Efremov

Kim

et al. 2004

Microelectronic Engineering

View full text Add to dashboard Cite

Section: Surface Kineticsmentioning

confidence: 99%

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Efremov

Kim

et al. 2004

Microelectronic Engineering

View full text Add to dashboard Cite

“…Gerlach-Meyer, Coburn, and Kay (19) have examined ion-induced etch rate dependence on neutral gas flux to the Si surface. Gerlach-Meyer (21) has also presented a kinetic model to explain the data. Gerlach-Meyer (21) has also presented a kinetic model to explain the data.…”

Section: Details Of Etching Sio~mentioning

confidence: 99%

Reactive Ion Beam Etching with CF 4: Characterization of a Kaufman Ion Source and Details of SiO2 Etching

Mayer¹,

Barker²

1982

J. Electrochem. Soc.

View full text Add to dashboard Cite

Recently, the use of reactive gases in ion milling equipment has received increasing attention. We have characterized the operation of a Kaufman‐type ion source for use with CF4 , by mass spectrometric measurements of both ionic and neutral components of the beam. Fragmentation of the parent gas to CFx+ ions and CFy neutrals is found to be extensive. Fragmentation is also strongly dependent on gas pressure and on confinement of the discharge in the source due to the axial magnetic field. Previously reported dependence of SiO2 etch rate on CF4 background gas pressure is examined in more detail. It is concluded that variation of ion composition does effect etch rate, but ion‐induced reaction of adsorbed neutral species is occurring. A simple mass transport model that considers adsorption and desorption processes of reagent and product species is adequate to explain the major features of the data.

show abstract

“…The basic rules for the analysis of plasma etching processes using this theory were developed by Gerlach-Meyer, 19 Winters and Coburn, 20 and Gray et al 21 Later, several researches demonstrated a successful use of this type of model both in predictive and quantitative trends. The basic rules for the analysis of plasma etching processes using this theory were developed by Gerlach-Meyer, 19 Winters and Coburn, 20 and Gray et al 21 Later, several researches demonstrated a successful use of this type of model both in predictive and quantitative trends.…”

Section: Surface Kineticsmentioning

confidence: 99%

Etching characteristics and mechanism of Au thin films in inductively coupled Cl2/Ar plasma

Efremov¹,

Kim²,

Kim³

2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The etching characteristics and physical/chemical mechanisms of Au thin films in Cl 2 /Ar plasma were investigated. It was found that an increase of the Ar content in Cl 2 /Ar plasma under constant pressure and input power conditions leads to an increasing etch rate of Au, which reaches a maximum value at 80%Ar/20%Cl 2 . X-ray photoelectron spectroscopy of the etched surfaces indicated the accumulation of reaction products in a chlorine-rich plasma. A proposed zero-dimensional model of volume kinetics, which involved the Langmuir probe data for electron temperature and electron density, showed monotonic change of both densities and fluxes of active species such as chlorine atoms and positive ions. In contrast, analyses of surface kinetics showed the possibility of nonmonotonic etch rate behavior due to the concurrence of physical and chemical factors in ion-assisted chemical reaction.

show abstract

Ion enhanced gas-surface reactions: A kinetic model for the etching mechanism

Cited by 75 publications

References 10 publications

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Reactive Ion Beam Etching with CF 4: Characterization of a Kaufman Ion Source and Details of SiO2 Etching

Etching characteristics and mechanism of Au thin films in inductively coupled Cl2/Ar plasma

Contact Info

Product

Resources

About