The effects of H 2 O vapor introduced during focused ion beam ͑FIB͒ milling of diamond͑100͒ are examined. In particular, we determine the yield, surface morphology, and microstructural damage that results from FIB sputtering and H 2 O-assisted FIB milling processes. Experiments involving 20 keV Ga ϩ bombardment to doses ϳ10 18 ions/cm 2 are conducted at a number of fixed ion incidence angles,. For each selected, H 2 O-assisted ion milling shows an increased material removal rate compared with FIB sputtering ͑no gas assist͒. The amount by which the yield is enhanced depends on the angle of incidence with the largest difference occurring at ϭ75°. Experiments that vary pixel dwell time from 3 s to 20 ms while maintaining a fixed H 2 O gas pressure demonstrate the additional effect of beam scan rate on yield for gas-assisted processes. Different surface morphologies develop during ion bombardment depending on the angle of ion incidence and the presence/absence of H 2 O. In general, a single mode of ripples having a wave vector aligned with the projection of the ion beam vector forms for as high as 70°. H 2 O affects this morphology by lowering the ripple onset angle and decreasing the ripple wavelength. At high angles of incidence (Ͼ70°) a step/terrace morphology is observed. H 2 O-assisted milling at Ͼ70°results in a smoother stepped surface compared with FIB sputtering. Transmission electron microscopy shows that the amorphized thickness is reduced by 20% when using H 2 O-assisted FIB milling.
Electron beam induced surface nucleation and low temperature thermal decomposition of metal carbonyls AIP Conf.The k~netics of low-energy electron beam induced metal film nucleation have been investigated. Expen~lents performed were the deposition of Fe and Cr from Fe(CO)s and Cr(CO)", respectIvely. It was found that the activation energy for the autocatalytic thermal decomposition of these compounds was lower than the activation energy for decomposition on Si surface. The autocatalytic activation energies were measured as 0.14 eV for Fe(CO)s and 1.02 eV for Cr(CO)6' The electron beam induced nucleation, together with the rapid autocatalytic decomposition, allowed for selective area metal film growth. A qualitative model based on classical nucleation theory describes well the effect of electron irradiation in induCing film growth. The electron beam induced nucleation step has been modeled in more detail and shows a t 4 dependence for the early stages of film growth, in agreement with the observed data.
Submicron (<0.25 μm) wide lines of iron have been deposited by low-energy (0.5–3.0 keV) electron beam induced decomposition of iron pentacarbonyl. Selective area thermal decomposition of iron pentacarbonyl has also been demonstrated. It was found that under certain conditions, the thermal decomposition only occurred on areas where a thin iron film had been previously deposited by electron stimulated decomposition. At 125 °C, the measured thermal decomposition probability was roughly 900 times greater on the deposited iron than previously reported data show for thermal decomposition on bare silicon. Anomalously high deposition yields of 15 to 50 iron atoms per electron were measured during electron stimulated decomposition.
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