Reactive Ion Beam Etching with  CF 4: Characterization of a Kaufman Ion Source and Details of SiO2 Etching

Mayer, T. M.; Barker, R. A.

doi:10.1149/1.2123929

Cited by 58 publications

(13 citation statements)

References 16 publications

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“…Following Mayer and Barker, [185][186][187] Engelmann et al 167 assumed that the ion-enhanced etching rate ER IE is proportional to the fractional neutral ͑oxygen and fluorine͒ coverage ⌰ given by ⌰ = ͑n O + n F ͒ / n. Here n O and n F are the num-bers of surface sites occupied by oxygen and fluorine, respectively, and n corresponds to the total number of surface sites.…”

Section: Examination Of Etching Modelmentioning

confidence: 99%

Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication

Oehrlein

Phaneuf

Graves

2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

174

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Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions Photolithographic patterning of organic materials and plasma-based transfer of photoresist patterns into other materials have been remarkably successful in enabling the production of nanometer scale devices in various industries. These processes involve exposure of highly sensitive polymeric nanostructures to energetic particle fluxes that can greatly alter surface and near-surface properties of polymers. The extension of lithographic approaches to nanoscale technology also increasingly involves organic mask patterns produced using soft lithography, block copolymer self-assembly, and extreme ultraviolet lithographic techniques. In each case, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates. The demand for nanometer scale resolution of image transfer protocols requires understanding and control of plasma/organic mask interactions to a degree that has not been achieved. For manufacturing of below 30 nm scale devices, controlling introduction of surface and line edge roughness in organic mask features has become a key challenge. In this article, the authors examine published observations and the scientific understanding that is available in the literature, on factors that control etching resistance and stability of resist templates in plasma etching environments. The survey of the available literature highlights that while overall resist composition can provide a first estimate of etching resistance in a plasma etch environment, the molecular structure for the resist polymer plays a critical role in changes of the morphology of resist patterns, i.e., introduction of surface roughness. Our own recent results are consistent with literature data that transfer of resist surface roughness into the resist sidewalls followed by roughness extension into feature sidewalls during plasma etch is a formation mechanism of rough sidewalls. The authors next summarize the results of studies on chemical and morphological changes induced in selected model polymers and advanced photoresist materials as a result of interaction with fluorocarbon/Ar plasma, and combinations of energetic ion beam/vacuum ultraviolet ͑UV͒ irradiation in an ultrahigh vacuum system, which are aimed at the fundamental origins of polymer surface roughness, and on establishing the respective roles of ͑a͒ polymer structure/chemistry and ͑b͒ plasma-process parameters on the consequences of the plasma-polymer interactions. Plasma induced resist polymer modifications include formation of a thin ͑ϳ1-3 nm͒ dense graphitic layer at the polymer surface due to ion bombardment and deeper-lying modifications produced by plasma-generated vacuum ultraviolet ͑VUV͒ irradiation. The relative importance of the latter depends strongly on initial polymer structure, whereas the ion bombardment induced modified layers are similar for ...

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Section: Examination Of Etching Modelmentioning

confidence: 99%

Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication

Oehrlein

Phaneuf

Graves

2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

174

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“…With a reactive gas in the RIBE mode, the beam contains a mixture of ions, the one given in the table being the main ion except for the work of Ref. ( 23) and ( 25), where the main ion was more likely CF2* (22,26). The plasma potential in RSE turns out to be about 30V, regardless of the plate separation or the plasma pressure, so that to a good approximation E~ in RSE is equal to the induced dc bias voltage Vde, 500 eV on SiO2, the physical sputtering yield is estimated as 0.7 at.lion (26), so that the part of the total Yield due to reactions [1]- [6] is 2.3 at.lion.…”

Section: Etch Mechanisms--havingmentioning

confidence: 99%

Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion Etching

Steinbrüchel¹,

Lehmann²,

Frick³

1985

J. Electrochem. Soc.

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Reactive sputter etching of SiO=, with CHF3-O~ plasmas has been investigated in a parallel-plate reactor by combining etch-rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer), and by examining etched profiles in the SEM. The importance of geometrical variables, such as plate separation and plate area, and the electrical parameters appropriate for characterizing the discharge are discussed. Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO~ with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO~ direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured etch yields are consistent with this picture. However, the plasma chemistry has a decisive influence on the etch rate of Si, and thus on the etch selectivity of SiO~ with respect to Si, and also on the exact shape of profiles etched into SiO2.

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“…In order to enhance etch selectivity and to increase etch rates, reactive ion beam etching (RIBE) has been developed (147)(148)(149).…”

Section: B Reactive Ion Beam Etchingmentioning

confidence: 99%

Plasma Etching

Mucha¹,

Hess

1983

ACS Symposium Series

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Reactive Ion Beam Etching with CF 4: Characterization of a Kaufman Ion Source and Details of SiO2 Etching

Cited by 58 publications

References 16 publications

Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication

Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication

Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion Etching

Plasma Etching

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