Ion bombardment of X-ray multilayer coatings: Comparison of ion etching and ion assisted deposition

Puik, E. J.; Wiel, M.J. van der; Zeijlemaker, H.; Verhoeven, J.

doi:10.1016/0169-4332(91)90039-m

Cited by 31 publications

(5 citation statements)

References 6 publications

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“…Secondly, the quality of the layers can be improved by applying layer deposition techniques based on the addition of energy during or after growth of each individual layer, for 0039-6028/$ -see front matter Ó 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.susc.2005.03.019 example by means of energetic ions [6,7]. This can smoothen the layer surface, resulting in a sharper interface.…”

Section: Introductionmentioning

confidence: 97%

Ion-induced interface layer formation in W/Si and WRe/Si multilayers

Kessels¹,

Verhoeven²,

Tichelaar³

et al. 2005

Surface Science

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Section: Introductionmentioning

confidence: 97%

Ion-induced interface layer formation in W/Si and WRe/Si multilayers

Kessels¹,

Verhoeven²,

Tichelaar³

et al. 2005

Surface Science

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“…These substantially improved the quality of the multilayers and their performance. Multilayers are deposited in vacuum systems most often using magnetron 1,2 or ion beam sputtering 3,4 although excellent mirrors are also obtained by electron beam deposition with subsequent ion beam polishing 5,6 . Molybdenum/silicon pair proved to be the best choice for normal incidence multilayers operating at 13.5 nm, the wavelength of choice for EUVL.…”

Section: Introductionmentioning

confidence: 99%

Multilayers for next-generation x-ray sources

Bajt

Chapman

Spiller³

et al. 2007

SPIE Proceedings

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ABSTRACT.Multilayers are artificially layered structures that can be used to create optics and optical elements for a broad range of x-ray wavelengths, or can be optimized for other applications. The development of next generation x-ray sources (synchrotrons and x-ray free electron lasers) requires advances in x-ray optics. Newly developed multilayerbased mirrors and optical elements enabled efficient band-pass filtering, focusing and time resolved measurements in recent FLASH (Free Electron LASer in Hamburg) experiments. These experiments are providing invaluable feedback on the response of the multilayer structures to high intensity, short pulsed x-ray sources. This information is crucial to design optics for future x-ray free electron lasers and to benchmark computer codes that simulate damage processes.

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“…The effect on smoothing the boundaries is obtained by in situ measurements of the reflection of C K radiation vs. multilayer thickness and ex situ grazing X-ray reflection at the Cu Ka line. In previous works [8][9][10][11] ion polishing has been applied successfully. Recently Schlatmann et al reported on an improvement of reflectivity by ion beam etching of Mo/Si multilayer coatings [12].…”

Section: Introductionmentioning

confidence: 99%

Smoothing of interfaces in ultrathin Mo/Si multilayers by ion bombardment

et al. 1993

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Mo/Si multilayers with a bilayer thickness of 2.6 nm are produced by electron beam evaporation in ultrahigh vacuum for soft X-ray optical applications. High reflectivities resulting from constructive interference in the stack are limited by the optical constants of the materials and by the quality of the interfaces. Smoothing of the boundaries is obtained by bombardment of the deposited layers with Ar + ions. The smoothness of the interfaces is controlled during the deposition by in situ measurement of the reflectivity for the C K radiation of the stack and after completion of the stack by means of a grazing X-ray reflection set-up with Cu Ks radiation. The soft X-ray reflectivity is measured with a laser-induced plasma light source.

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Ion bombardment of X-ray multilayer coatings: Comparison of ion etching and ion assisted deposition

Cited by 31 publications

References 6 publications

Ion-induced interface layer formation in W/Si and WRe/Si multilayers

Ion-induced interface layer formation in W/Si and WRe/Si multilayers

Multilayers for next-generation x-ray sources

Smoothing of interfaces in ultrathin Mo/Si multilayers by ion bombardment

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