Articles you may be interested inHydrogen silsesquioxane on SOI proximity and microloading effects correction from a single 1D characterization sample J. Vac. Sci. Technol. B 32, 06F511 (2014); 10.1116/1.4901567 Three-dimensional proximity effect correction for large-scale uniform patterns J. Vac. Sci. Technol. B 29, 06F314 (2011); 10.1116/1.3660785 True three-dimensional proximity effect correction in electron-beam lithography Proximity effect correction using blur map in electron projection lithography J. Vac. Sci. Technol. B 23, 3188 (2005); 10.1116/1.2101791 Dose, shape, and hybrid modifications for PYRAMID in electron beam proximity effect correctionThe authors present a general approach to combine model-based dose modulations and shape modifications into a hybrid proximity effects correction (PEC) scheme for electron beam lithography. The authors simplify this scheme significantly by using an appropriate dose correction strategy. This allows us to use an existing optical proximity correction tool for the shape adjustments. This hybrid PEC scheme is demonstrated by computing corrections for simple test patterns as well as a more complex pattern. The model used corresponds to an electron multibeam tool with an acceleration voltage of 50 kV. It predicts resist contours from a written dose distribution. The authors evaluate the quality of the results both for nominal process conditions and in the presence of process variations. The results are compared against the corresponding results for a correction using only dose modulation. The authors also use the hybrid scheme to compensate intentional overexposure by shape adjustments and include these results in the comparison so that the impact of overexposure on robustness against process variations can be determined.
Abstract. Mo/Si multilayers are fabricated by electronbeam evaporation in UHV at different temperatures (30 ° C, 150 ° C, 200 ° C) during deposition. After completion their thermal stability is tested by baking them at temperatures (Tbak) between 200°C and 800°C in steps of 50°C or 100 ° C. After each baking step the multilayers are characterized by small angle CuK -X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500 ° C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150 ° C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200 ° C stands even a 20 min 500 ° C baking without considerable changes in the reflectivity behaviour. 68.55, 68.65, 78.65 In the wavelength range between 13 nm and 30 nm the combination of Mo and Si is most widely used for normalincidence multilayer mirrors. Reflectivities around 60% have been achieved with both sputtering [1] and e -beam evaporation in combination with thermal treatments during deposition [2,3]. Besides a high value for the reflectivity, the stability of the multilayer stack is also an important property, since applications include for example synchrotron radiation optics, where the multilayer can be heated to a few hundred degrees Celsius [4]. The long-term stability is also important for a number of applications. PACS:The thermal stability of Mo/Si multilayers has been studied earlier in several works [5][6][7][8][9][10][11] but in all of them the multilayers are fabricated by sputtering. In [12] it is shown that thermal treatment during e--beam deposition can considerably enhance the reflectivity of Mo/Si multilayer * Present address: European Synchrotron Radiation Facility, F-38043 Grenoble, France mirrors with a double layer spacing of about 7.5 nm. For a deposition temperature (Tdep) of 150°C the reflectivity is about a factor of two larger than the reflectivity of the 30 ° C and 200 ° C sample [12,13]. In other previous works [14,15] the influence of the deposition temperature on the microstructure of Mo/Si-multilayer systems fabricated by e--beam evaporation was studied. They have shown that Mo/Si muttilayers have interlayers of a mixture of Mo and Si at the Mo-Si interfaces and that the thickness of Mo-on-Si interlayers increases with increasing deposition temperature, while the thickness of the Si-on-Mo interlayers keeps constant. In our work the influence of the different microstructure for the multilayers which were deposited at different temperatures on the thermal stability is also investigated.
EUV lithography resolves features below 11 nm. However, photonic and atomic variations at these photon energies and dimensions lead to less than 1:109 potential stochastic defects causing device failures in stable manufacturing processes. This study investigates a methodology intended to identify root causes of stochastic defects with potential mitigation paths. Simulation techniques using pseudo random numbers are used to identify failing photonic and chemical event or distribution combinations. Failing combinations occurring in many photon-chemical configurations are thought to have potential mitigation methodologies. Photonic effects demonstrated significant impacts on stochastic defect formation with approximately 73% of the photon seeds resulting in a failure in at least 60% of the trials. The material results were mixed with large failure quantities that demonstrated low impacts. The photonic shot noise based failures were dominating in this study and these failures will not be mitigated by material enhancement alone.
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