Ion bombardment of AlN films deposited in a reactive sputtering process with accurate control of the mass flow of the reactive gas

Alkjærsig, K.; Christensen, Henrik Bærbak; Gupta, B. K.; Jensen, U.; Pedersen, G.N.; Sørensen, G.

doi:10.1016/0257-8972(92)90289-m

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Cited by 8 publications

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“…PLD and RMS are the most frequently utilized techniques in AlN growth because of their relatively lower deposition temperatures and greater controllability compared to PAMBE and MOCVD. The improvement is due to a chemical effect rather than radiation damage (Alkjaersig et al, 1992). In contrast, the RMS is more effective for largescale depositions with a higher reliability and a good control of film properties.…”

Section: Properties and Productionsmentioning

confidence: 99%