Hard thin films

Mylvaganam, Kausala; Chen, Yiqing; Liu, Weidong; Лю, Мэй; Zhang, Liangchi

doi:10.1016/b978-0-85709-211-3.00021-2

Cited by 9 publications

(1 citation statement)

References 96 publications

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“…For instance, semiconductor materials play a vital role in the optoelectronic devices [1]. Semiconductors have gained significance key materials for a large variety of applications, including optoelectronics and electromechanical systems (MEMS, NEMS) (laser diodes, LED, solar cells, detectors) [2]. The III-nitride semiconductors trio, like GaN, AlN, and InN have been garnered a lot of attention as the preferred material for the emission and detection of a vast range of optical spectrum, including for laser diodes, short-wavelength light-emitting diodes (LEDs), solar cells and optical detectors [3,4].…”

Section: Introductionmentioning

confidence: 99%

Electro-optic and thermoelectric reponse of SiP and SiAs for solar and thermal applications

Asghar,

Waheed,

Shabbir

et al. 2024

Phys. Scr.

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Based on first-principles calculations, we investigated the electro-optic and thermoelectric properties of SiX (X = P, As). We find that the SiAs (-30613.62300 Ry) is more favorable than SiP(-1158.99360 Ry) due to higher optimized energies. The positive phonon spectra confirms the dynamical stability of these materials. The SiP and SiAs exhibited the semiconductor nature with the band gap of 2.33 eV, and 2.04 eV, respectively. Interestingly, the SiP possesses a direct band gap, which could be promising for optoelectronic devices. We find that SiX (X = P, As) showed the electron transition from valance band to conduction band owing towards the strong absorption of sharp band edges. The SiX (X = P, As) compound strongly absorbed light of energy 4.0 eV, which suggests it a potential candidate for solar cell applications. Furthermore, the compound exhibited the strong absorption of whole sun spectrum (ultra-violet to infra-red wave length), makes it capable for the applications in optical devices. Additionally, we have computed the thermoelectric properties using Boltztrap code. We have estimated the zT value 0.67 and 0.76 for SiP and SiAs, respectively. Both the SiAs and SiP exhibits a high zT, which could be applicable in the thermoelectric devices. Based on our calculated results, we anticipate that our studied materials could be an encouraging candidate for optical devices and thermoelectric devices.

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Section: Introductionmentioning

confidence: 99%

Electro-optic and thermoelectric reponse of SiP and SiAs for solar and thermal applications

Asghar,

Waheed,

Shabbir

et al. 2024

Phys. Scr.

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SILAR Deposition of Metal Oxide Nanostructured Films

Ratnayake

Ren

Colusso

et al. 2021

Small

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Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.

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Emerging Technologies

Küfeoğlu

2022

Sustainable Development Goals Series

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This chapter presents brief descriptions and working principles of 34 emerging technologies which have market diffusion and are commercially available. Emerging technologies are the ones whose development and application areas are still expanding fast, and their technical and value potential is still largely unrealised. In alphabetical order, the emerging technologies that we list in this chapter are 3D printing, 5G, advanced materials, artificial intelligence, autonomous things, big data, biometrics, bioplastics, biotech and biomanufacturing, blockchain, carbon capture and storage, cellular agriculture, cloud computing, crowdfunding, cybersecurity, datahubs, digital twins, distributed computing, drones, edge computing, energy storage, flexible electronics and wearables, healthcare analytics, hydrogen, Internet of Behaviours, Internet of Things, natural language processing, quantum computing, recycling, robotic process automation, robotics, soilless farming, spatial computing and wireless power transfer.

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Hard thin films

Cited by 9 publications

References 96 publications

Electro-optic and thermoelectric reponse of SiP and SiAs for solar and thermal applications

Electro-optic and thermoelectric reponse of SiP and SiAs for solar and thermal applications

SILAR Deposition of Metal Oxide Nanostructured Films

Emerging Technologies

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