Ion bombardment in a normal-gate FED

X-ray source using carbon-nanotube field emitter with side-gate electrode

“…Three-terminal fieldemission devices, consisting of an anode, a cathode, and a gate electrode, have advantage that emission current and accelerating voltage can be independently controlled, which means that X-ray intensity and energy can be independently controlled if the three-terminal structure is adopted. There are several methods to fabricate a gate electrode at a CNT cathode, such as a metal mesh, [23][24][25] a top-gate structure, 15) an under-gate structure, 26,27) and a side-gate structure. 28,29) In order to realize the large-area X-ray source using CNT threeterminal field emitters with a cost-effective and easy process, CNT field emitters with side-gate electrodes, which are placed in-plane with the CNT cathodes, fabricated by screen printing is one of the most promising structures.…”

Effect of SrO, ZrO2 on ion bombardment-resistant for the lead-silicate glass-based microchannel plate

“…Currently, the existing literature shows that material damage caused by ion bombardment is one of the main reasons for the failure of the multiplier for low-energy/high-energy ion detection, such as in the time-of-flight mass spectrometer [6] . It has been mentioned in related reports that in the design and manufacture of devices that may be directly bombarded by ions, such as field effect transistors, plasma displays, and cold cathodes of electron emission devices, the service life of the devices is improved by the use of corresponding ion bombardment-resistant materials [7][8][9][10] . While there is not much work on the ion bombardment resistance of the microchannel plate; not to mention it can be improved by the design and optimization of the glass material constitution of the microchannel plate.…”

Field Emission Organic Light Emitting Diode

“…In a FED the electron source consists of a matrix-addressed array of millions of cold emitters. This is field emission arrays (FEAs), which is placed in closed proximity (0.2mm) to a phosphor faceplate and is aligned such that each phosphor pixel has a dedicated set of field emitters [10].…”