Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/m) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy (FEM) measurements show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams may be coherent.Based on our high-resolution transmission electron microscopy, infrared spectroscopy and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources.

A novel class of low molecular-weight organic resist materials for nanometer lithography, 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4′,4″-tris(allylsuccinimido) triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass-transition temperature (Tg) of 64 °C and ASITPA with a Tg of 80 °C were found to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an electron beam at 50 keV.

A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of ≈2 μC cm−2 and enabling the fabrication of ≈25 nm line patterns.

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Abstrad. We report on angular distribution meaSuremene in 50 keV Ar15+ on Ar chargetransfer collisions. Distributions w m p n d i n g to the production of up to quintuplysharged recoils were oblained, and compared to the predictions of the molecular classical overbarrier model (MCBM) of Niehaus under different assumptions. We found no evidence that the contributions of the tightiy bund target elenrons are overestimated by the MCBM, in c o n m with the observations of D m d el a1 and Guillemot el a/. 'Ex previously r e p l e d Q-values of Ali erof for the s m processes were funher compared to the model predictions under similar assumptions and the e n d s were found U) be consistent with those of the angular distributions.