Ion-beam synthesis and characterization of narrow-gap A3B5 nanocrystals in Si: Effect of implantation and annealing regimes

Komarov, F. F.; Власукова, Л. А.; Milchanin, O.; Wesch, W.; Wendler, E.; Żuk, J.; Пархоменко, И. Н.

doi:10.1016/j.mseb.2013.07.011

Cited by 27 publications

(21 citation statements)

References 33 publications

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“…2c). Such an effect was observed in [4] for Si with the InAs nanoclusters. We assume that the reason lies in the relaxation of stresses at the interface of the A 3 B 5 nanocrystal and Si due to the formation of fine dislo cation networks.…”

Section: Resultsmentioning

confidence: 58%

“…A promising method for an increase in the optical yield of silicon employs spe cific features of nanosized particles in silicon and sili con dioxide and the influence of the quantum dimen sional effect on the intensity and spectral position of the emission bands [1,2]. An important approach to the integration of optically efficient A 3 B 5 materials and silicon involves the formation of quantum dots of the A 3 B 5 semiconductors in crystalline silicon and sil icon dioxide [2][3][4]. The creation of light emitting structures of the IR and visible spectral ranges will make it possible to use relatively fast optical commu tation rather than electron transfer in extra and ultra large scale ICs and, hence, increase the working rate and decrease the sizes of electronic elements.…”

Section: Introductionmentioning

confidence: 99%

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Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

et al. 2015

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Rutherford backscattering and transmission electron microscopy (TEM) are used to study distri butions of impurities and structure of the GaSb + Si nanocomposites in several regimes of ion implantation and thermal processing. It is demonstrated that the hot implantation and annealing lead to a significant loss of impurity and the shift of the maximum concentration of impurity atoms toward the surface. The TEM data prove the formation of nanocrystals with sizes ranging from 20 to 100 nm, dislocation defects, and residual mechanical stresses. Raman spectroscopy is used to study the structure and phase composition of experimen tal silicon samples containing various nanocrystalline impurities.

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Section: Resultsmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

et al. 2015

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“…The diffusion of impurity through the surface of the target is embodied in the boundary condition (23) where is the rate of migration of a given impu rity through the surface of the target. It was assumed here that bound impurity does not taken part in diffu sion.…”

Section: Resultsmentioning

confidence: 99%

“…Synthesis of direct gap III-V and II-VI semiconductors in a sili con matrix is viewed as a promising technology of new generation silicon detectors and LEDs. Previ ously [21][22][23][24], we discussed experimental data for the synthesis of InAs, InSb, and GaSb nanoclusters in Si and SiO 2 by high dose ion implantation and post implantation high temperature annealing. Elemental and structural analyses of the samples were carried out, and their optical characteristics were studied.…”

Section: Formation Of Inas Nanoclusters In Silicon By High Dose Ion Imentioning

confidence: 99%

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

et al. 2015

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A physicomathematical model and dedicated software are developed for simulating high dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solv ing a set of convection-diffusion-reaction equations. The synthesis of InAs nanoclusters produced by high dose implantation of As + and In + ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 10 16 cm -2 ) and In implantation (250 keV, 2.8 × 10 16 cm -2 ) into silicon at 500°C, the nanoclusters are distributed with a density of 2.87 × 10 11 cm -2 . From experimental data and theoretical results, the coefficients of radiation stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nan oclusters), are determined. Experimental data are compared with simulation results.

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“…Попытки ионного синтеза полупроводниковых соединений А III В V предпринимались неоднократно [8][9][10]. Однако до недавнего времени эти попытки были эпизо-дическими, и лишь в последние годы появились целенаправленные исследования процессов ионного синтеза и свойств нанокристаллов соединений А III В V в кремнии [11][12][13].…”

Section: Introductionunclassified

Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

Тысченко¹,

Voelskow

Михайлов³

et al. 2019

Физика И Техника Полупроводников

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By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO_2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As^+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO_2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D _As = 3.2 × 10^–14 cm^2 s^–1.

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Ion-beam synthesis and characterization of narrow-gap A3B5 nanocrystals in Si: Effect of implantation and annealing regimes

Cited by 27 publications

References 33 publications

Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

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