Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

Abstract

Rutherford backscattering and transmission electron microscopy (TEM) are used to study distri butions of impurities and structure of the GaSb + Si nanocomposites in several regimes of ion implantation and thermal processing. It is demonstrated that the hot implantation and annealing lead to a significant loss of impurity and the shift of the maximum concentration of impurity atoms toward the surface. The TEM data prove the formation of nanocrystals with sizes ranging from 20 to 100 nm, dislocation defects, and residual mechanical stresses. Raman spectroscopy is used to study the structure and phase composition of experimen tal silicon samples containing various nanocrystalline impurities.

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

“…In our paper [25] devoted to GaSb nanocrystals SPE-grown on Si(001) and embedded in a silicon matrix, we obtained only one ER for all the nanocrystals: GaSb(111)||Si(111) and GaSb[1true1¯0]||Si[1true1¯0]. The ER looks differ from the ER obtained for GaSb nanocrystals formed by high-dose ion implantation followed by GaSb crystallization inside the silicon lattice: GaSb(002)||Si(002) and GaSb[1true1¯0]||Si[1true1¯0] [26]. However, due to the symmetry of the Si and GaSb crystals, if one observes ER GaSb(111)||Si(111) and GaSb[1true1¯0]||Si[1true1¯0], the following r...…”

“…So, we can state that the ERs observed for GaSb nanocrystals grown both by SPE and by ion-beam synthesis are identical. This means that when GaSb crystallizes directly from a Si crystal lattice during MBE [7,11], ion-beam synthesis [26], or SPE of a thin layer of GaSb (less 5 nm) [25], the only ER is GaSb(111)||Si(111) and GaSb[1true1¯0]||Si[1true1¯0]. In this case, the matching direction relationship is GaSb[1true1¯0]||Si[1true1¯0], which leads to a mismatch of 12.2% in this direction.…”

Влияние условий синтеза и наночастиц олова на структуру и свойства композитных тонких пленок a-С:Н<Sn>

“…Например, наночастицы серебра, золота и платины в углеродной матрице проявляют плазмонный резонанс поглощения и перколяционный механизм проводимости [6][7][8][9], в основе которых квантовые состояния электронной подструктуры наночастиц. Композитные материалы широко исследуются и находят все большую область применения [10][11][12][13][14]. Возможность управления электронными процессами в композитных материалах на основе аморфных углеродных пленок позволит расширить область их использования, в частности для создания высокочувствительных сенсоров, новых устройств в нано-, оптоэлектронике и др.…”