Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Chusovitin, E. A.; Dotsenko, S. A.; Chusovitina, S. V.; Goroshko, D. L.; Гутаковский, А. К.; Subbotin, Evgeniy Y.; Галкин, Н. Г.

doi:10.3390/nano8120987

Cited by 11 publications

(5 citation statements)

References 26 publications

(57 reference statements)

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“…Film roughness is 6.7 nm. The result obtained corresponds to our previous data, 25) where it was shown that annealing of a stoichiometric thin GaSb film on Si(001) leads to the break of the film at an annealing temperature of more than 300 °C. Based on the position of the TO phonon peak of GaSb in the Raman spectrum of sample B (227.54 cm −1 ), we find that the lattice of GaSb islands is compressed by 0.16%, i.e.…”

Section: Resultssupporting

confidence: 90%

“…GaSb grains with the same ratio were found earlier in a polycrystalline GaSb film grown by the same method on a Si(001) substrate. 25) Therefore, it can be approved that the smooth terraces found on the AFM image of the surface of sample A are polycrystalline GaSb SD1005-3…”

Section: Resultsmentioning

confidence: 97%

“…To form sample A, we used the procedure under which a GaSb thin film was grown, described in. 25) Ga and Sb atoms were deposited on a Si(111)7 × 7 substrate at room temperature (RT). The resulting GaSb mixture was annealed in two stages at a temperature of 200 °C for 15 min and at a temperature of 300 °C for 20 min.…”

Section: Methodsmentioning

confidence: 99%

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Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy

Chusovitina

Subbotin

Chusovitin

et al. 2022

Jpn. J. Appl. Phys.

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The solid-state formation of gallium antimonide on Si(111) from a stoichiometric mixture of Ga-Sb in the temperature range of 300–500ºC and thicknesses of 12–40 nm was studied under ultrahigh vacuum conditions. The influence of the preformed GaSb seed islands on the morphology, composition and structure was studied. It has been found that at 300ºC a strained continuous polycrystalline film is formed, which rupture at 350ºC. It has been shown that a continuous single-crystal GaSb film grows at 400–500ºC if the sample is annealed at a weak antimony flow. This is also facilitated by the preliminary formation of a high density of nanosize GaSb seed islands. As a result, a continuous relaxed film with epitaxial relations GaSb(111)||Si(111) and GaSb[1-10]||Si[1-10] was obtained from a Ga-Sb mixture 40 nm thick at 500ºC. We demonstrate a possibility of direct formation of GaSb on Si(111) without buffer layers of other chemical elements.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 97%

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Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy

Chusovitina

Subbotin

Chusovitin

et al. 2022

Jpn. J. Appl. Phys.

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“…2a for 2 values from 68.3° to 69.0° (close to the principal peak) presents a small left shoulder related to the GaSb crystallization in the same direction of the substrate. This kind of substrate influence has been studied by Chusovitin et al 36 in GaSb thin films synthesized via solid-phase epitaxy.…”

Section: Resultsmentioning

confidence: 98%

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Calderón

Dussán

2021

J. Electron. Mater.

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This work presents a study of the morphological and structural properties of GaSb and GaSb/Mn thin films as support for the construction of GaSb/Mn multilayer systems deposited on Si (001) wafer substrate for electronic and spintronic applications. Thin films were obtained through DC magnetron sputtering, and the GaSb thin film was subjected to high-vacuum annealing for 2 h, 4 h, 6 h, 8 h and 10 h. The morphological properties were studied by SEM micrographs. It was observed that the width of depression regions on the GaSb thin film surface decreased (from ~ 617 nm to ~ 56 nm) when the annealing time was increased. A fast Fourier transform filter allowed identifying the formation of grains on the surface of the sample. The dependence of the grain size on the annealing times was described through the abnormal model. XRD measurements and the Burke-Turnbull model were used for establishing the dependence between GaSb crystallite size and annealing times. From Auger spectra, it was possible to determine the Ga diffusion process, its high mobility in the GaSb matrix, and its relationship with morphological properties. It was observed that the thermal processes favor the GaSb phase formation and the increase of grain size on the surface of the sample. AFM micrographs showed the topographical characteristics of the GaSb thin films surface and MFM images presented an exploration of the magnetic behavior for the bilayer system. Loops in hysteresis at 50 K were observed through measurements of the vibrating sample magnetometer, for the [GaSb/Mn] 3 sample fabricated at room temperature (T s = 300 K). These loops have been attributed to the magnetic anisotropy conditions generate through unbalanced Mn magnetic moments due to the Mn antiferromagnetic property presented at this temperature and the diffuse interfaces between GaSb and Mn layers. Lastly, the study of morphological properties of single-layer GaSb and its dependence on annealing times allowed determining that GaSb/Mn multilayer systems fabricated at room temperature present diffuse interfaces, although with clearly distinguished layers, and represent an alternative option for their fabrication.

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“…The process becomes more complicated in the case of compound semiconductor growth, since the binding energies of adsorbate atoms both to the substrate and in the compound itself, should be considered. According to [29,30] a continuous GaSb film is formed on a Si substrate at a low annealing temperature. A subsequent increase in temperature turns it into islands due to a large discrepancy between the lattice parameters of the substrate and the film [31], which is undesirable in the formation of continuous GaSb films [32].…”

Section: Resultsmentioning

confidence: 99%

Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation

Goroshko¹,

Chusovitin²,

Subbotin³

et al. 2020

Semicond. Sci. Technol.

Self Cite

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The temperature stability of high-density GaSb quantum dots grown on a Si(111) surface using solid-phase epitaxy is investigated during annealing at 450 °C. It is found that the bare silicon surface plays a critical role in the GaSb decomposition through the destruction of Sb–Ga bonds with the simultaneous formation of Sb–Si bonds. GaSb decomposition can be significantly suppressed if saturated monolayer coverage in the form of the Si(111)-(√3 × √3)-R30°-Sb surface reconstruction is preliminarily formed. This allows GaSb quantum dots to be embedded in the silicon matrix using molecular beam epitaxy at high temperature.

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Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Cited by 11 publications

References 26 publications

Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy

Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation

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