Ion beam syntheses and microstructure studies of a new FeSi2 phase

Jin, Shan; Li, X. N.; Zhang, Z.; Chen, Dong; Gong, Z.X.; Bender, Hugo; C., T.

doi:10.1063/1.363240

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…There are many ways to produce β-FeSi 2 , such as ion implantation [5][6][7][8][9][10], pulsed laser deposition [11] and chemical vapour deposition [12], in which β-FeSi 2 thin film can be produced on a substrate. Ball milling is another simple and easy way.…”

Section: Introductionmentioning

confidence: 99%

Formation of $\beta$-FeSi2 and the remanent $\alpha$-Fe

Li¹,

Chenhui²,

Zhu³

et al. 2002

J. Phys.: Condens. Matter

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Measurement of x-ray diffraction patterns, Mössbauer spectra, Raman scattering spectra and HRTEM/EDAX for β-FeSi 2 obtained by milling Fe 30 Si 70 and HCl treatment shows that the Fe is not exhausted in the final product. There are two reactions during the ball milling process: one is the surface reaction to produce β-FeSi 2 between Fe and Si by driving force; some α-Fe is surrounded by β-FeSi 2 . Another process is that Si diffuses through the β-FeSi 2 layer and reacts with Fe inside. However, this cannot exhaust all the Fe inside the grain, so the α-Fe still exists although there is little. The two processes coexist during the ball milling procedure, but the first process plays the main role for the first 50 h, then the second process mainly influences the proportion of α-Fe.

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Section: Introductionmentioning

confidence: 99%

Formation of $\beta$-FeSi2 and the remanent $\alpha$-Fe

Li¹,

Chenhui²,

Zhu³

et al. 2002

J. Phys.: Condens. Matter

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Controllable growth of α‐ and β‐FeSi₂ thin films on Si(100) by facing‐target sputtering

Pan

Teng

et al. 2007

Physica Status Solidi (a)

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Single‐phase β‐ and α‐FeSi2 thin films can be grown on Si(100) with and without a thin Fe buffer layer by adopting a facing target radio‐frequency magnetron sputtering method. The role of the buffer layer on the formation of β‐ and α‐FeSi2 thin film was discussed. The composition of β‐FeSi2 thin film can be tuned from Fe enrichment to Si enrichment by altering the radio‐frequency input power applied on the Si or/and Fe target, and the β‐FeSi2 thin film has a high (202)/(220) orientation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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