Thin Film Silicide Formation

Борисенко, В. Е.

doi:10.1007/978-3-642-59649-0_2

Cited by 7 publications

(10 citation statements)

References 177 publications

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“…The crystallization in HMS follows a peritectic reaction, wherein depending on the nominal composition, dopants, and processing condition (such as solidification rate, pressure, temperature, etc. ), , HMS crystallizes with varying stoichiometry primarily resulting from such labile Si atoms and modulated lattice structure. , When the incoming atom cannot adopt the local geometry of the site it occupies, it is referred to as discordant . The solubilities of B and Ge in HMS alloy as reported previously were known to range from 0 to x ∼ 0.04 (B) and x ∼ 0.01 (Ge) .…”

Section: Discussionmentioning

confidence: 94%

“…The modulated crystal structure of MnSi γ constitutes of a [Si] subsystem, wherein Si atoms may exist in varying oxidation states , and coordination numbers, making them prone to local structural instability by migration or diffusion. The [Si] subsystem constitutes labile Si atoms with dangling bonds, which are more reactive than Si atoms bonded to Mn.…”

Section: Discussionmentioning

confidence: 99%

“…Silicon-rich manganese silicide (HMS) crystallizes into a degenerate semiconducting crystal with low thermal conductivity and constitutes earth-abundant elements, owing to which they have been extensively explored as prospective p -type material for thermoelectric (TE) applications. , The efficiency of conversion is governed by the TE figure of merit ( zT ), which is evaluated at absolute temperature ( T ) as zT = ( S 2 σ κ ) T , wherein S , σ, and κ represent the temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity . Due to the inverse interrelation among these electrical and thermal transport properties, most research efforts in developing TE materials are directed toward optimization of carrier concentration ( n ) and reduction of lattice thermal conductivity (κ L ), wherein to achieve an enhanced performance in HMS, both p-type and n-type dopants were actively studied in the past for their substitution at the [Mn] and/or [Si]-subsystems (≈sublattice). − However, optimization of electrical power factor ( S 2 σ) by doping or reduction in κ L by nanostructuring approaches is often skewed majorly by the inherent structural modulation and undesirable segregation of MnSi as a secondary phase. − …”

Section: Introductionmentioning

confidence: 99%

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Discordant Doping and Labile Silicon Atoms in Higher Manganese Silicide

Chauhan,

Miyazaki

2023

ACS Appl. Energy Mater.

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Discordant doping is broadly connoted to atomic substitutions wherein even a marginal amount of incoming atom is unable to adopt the local geometry of the site it occupies and gets inhomogeneously distributed within the crystal. Herein, we report the implication of partial B or Ge doping on the labile, i.e., easily altered, Si atoms of higher manganese silicide (MnSi γ ), prepared by spark plasma sintering of melt-spun ribbons. The synthesized Mn(Si 1−x D x ) γ alloys (where D = B or Ge are dopants) having a Nowotny chimney ladder (NCL) phase, showed a close relation of their structural stability and electrical transport properties to the 14-electron rule. Following the (3 + 1) dimensional superspace approach, the modulation vector component (γ) was accurately determined and correlated with the electrical transport and valence electron count (VEC) of the synthesized samples. Beyond the solubility limit of B/Ge onto the labile [Si] subsystem, a homogeneous formation of Si-rich domains and (Si, Ge) solid solution within the MnSi γ matrix was distinctively observed for B and Ge doping, respectively, which modifies the thermal and electrical transport properties. Comparatively, Ge doping was more favorable than B doping on the Si sites of MnSi γ , wherein the peak thermoelectric figure of merit (zT) ∼ 0.67 (±0.1) at 823 K was obtained for Mn(Si 0.99 Ge 0.01 ) γ , corresponding to ∼50% enhancement, when compared to the Ge-doped HMS single-crystal counterparts.

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Section: Discussionmentioning

confidence: 94%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Discordant Doping and Labile Silicon Atoms in Higher Manganese Silicide

Chauhan,

Miyazaki

2023

ACS Appl. Energy Mater.

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“…225, anti-CaF 2 structure). 21 The most stable bulk phase of Ca 2 Si has orthorhombic structure with the space group Pnma (No. 62, anti-PbCl 2 structure).…”

Section: Methods and Details Of Investigationmentioning

confidence: 99%

Interplay between structural changes, surface states and quantum confinement effects in semiconducting Mg₂Si and Ca₂Si thin films

Alekseev

Мигас

Филонов

et al. 2023

Phys. Chem. Chem. Phys.

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“…1–3 Beyond the well-recognized Si–Ge alloys, transition metal silicides (TMS) such as higher manganese silicides (HMSs), FeSi 2 , and CrSi 2 have been actively explored from the onset as cheaper options for developing low-cost and scalable TE technology. 4–6 The efficacy of TE conversion is generally determined by the dimensionless parameter zT which is expressed as , where S (Seebeck coefficient), σ (electrical conductivity) and κ (thermal conductivity) are measured at the absolute temperature ( T ). 7 Consequently, TE energy conversion stems from the coupled transport properties of charge carriers and phonons in a material system.…”

Section: Introductionmentioning

confidence: 99%