Ion beam sputtered Ge–Si–O amorphous thin films for microbolometer infrared detectors and their application in earth sensors

Sumesh, M. A.; Karanth, S. P.; Prakash, Sharadadevi; Laxmiprasad, A. S.; Nagendra, C. L.

doi:10.1016/j.sna.2012.12.023

Cited by 12 publications

(6 citation statements)

References 32 publications

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“…To compare the characteristics of the previous Type I, II, and the proposed Type III row driver circuits, before real implementation and measurement, we performed PSPICE simulations [ 35 ]. The resistance of the sensor elements are assumed to be in the range from 100 Ω to 1 MΩ, which can cover most of the previously reported resistive sensors [ 1 , 2 , 3 , 4 , 6 , 7 , 8 , 9 , 11 , 12 , 14 ].…”

Section: Resultsmentioning

confidence: 99%

“…Resistive sensors, such as piezoresistive tactile sensors [ 1 , 2 , 3 , 4 , 5 , 6 ], infrared sensors [ 7 , 8 , 9 , 10 ], and light-dependent resistors [ 11 , 12 ], have been widely used for measurement or instrumentation in a variety of fields. These sensors are usually applied in the form of an array to obtain a required measurement resolution.…”

Section: Introductionmentioning

confidence: 99%

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High-Accuracy, Compact Scanning Method and Circuit for Resistive Sensor Arrays

Kim

Kwon

Choi

2016

Sensors

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The zero-potential scanning circuit is widely used as read-out circuit for resistive sensor arrays because it removes a well known problem: crosstalk current. The zero-potential scanning circuit can be divided into two groups based on type of row drivers. One type is a row driver using digital buffers. It can be easily implemented because of its simple structure, but we found that it can cause a large read-out error which originates from on-resistance of the digital buffers used in the row driver. The other type is a row driver composed of operational amplifiers. It, very accurately, reads the sensor resistance, but it uses a large number of operational amplifiers to drive rows of the sensor array; therefore, it severely increases the power consumption, cost, and system complexity. To resolve the inaccuracy or high complexity problems founded in those previous circuits, we propose a new row driver which uses only one operational amplifier to drive all rows of a sensor array with high accuracy. The measurement results with the proposed circuit to drive a 4 × 4 resistor array show that the maximum error is only 0.1% which is remarkably reduced from 30.7% of the previous counterpart.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Accuracy, Compact Scanning Method and Circuit for Resistive Sensor Arrays

Kim

Kwon

Choi

2016

Sensors

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“…Thermal time constant τ th is extracted from Figure using Eq. , where the estimated f c is of about 17 Hz. Then the thermal response time can be extracted by Eq.…”

Section: Resultsmentioning

confidence: 99%

Performance Characterization of Infrared Detectors Based on Polymorphous Silicon‐Germanium (pm‐Si_xGe_1−x:H) Thin Films Deposited at Low Temperature

Jiménez

Moreno

Torres

et al. 2018

Physica Status Solidi (a)

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In this work, the fabrication of infrared detectors (uncooled microbolometers) using surface micromachining techniques is presented. The thermo-sensing film used in the devices is polymorphous silicon-germanium (pm-Si x Ge 1Àx :H) produced by low frequency plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 C). Polymorphous semiconductors basically are amorphous semiconductors with embedded nanocrystals (of diameter of about 2-5 nm), which are formed during the film deposition. The presence of nanocrystals impacts on the properties of the material by reducing the density of states (defects) and improving the stability of the films. For infrared detectors those materials present important properties such as high temperature coefficient of resistance (TCR ¼ À4.7% K À1 ), long-term stability, low deposition temperature, and silicon CMOS compatibility. Test structures with size of 50 Â 50 μm 2 and different thermal isolation designs are characterized under IR radiation (0.7-20 μm) in a frequency range of 5-100 Hz. From voltage responsivity and noise measurements, the specific detectivity is calculated achieving values of 1 Â 10 8 cm Hz 1/2 W À1 and thermal response time of 8-9 ms under 150 nA bias current. The above characteristics make those devices very suitable for the development of infrared focal plane arrays (IRFPAs).

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“…Then, through electrical signal processing, the temperature of the target object is obtained. Nowadays, the main commercial uncooled thermistor materials are amorphous silicon (a-Si), vanadium oxide (VO 2 ), and germanium-siliconoxide [6][7][8]. However, a-Si shows long response times of tens to hundreds of ms [9,10].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Bolometric Responses of MoS2 Nanoflowers and Multi-Walled Carbon Nanotube Composite Network

Wang

Deng

et al. 2022

Nanomaterials

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Due to their broadband optical absorption ability and fast response times, carbon nanotube (CNT)-based materials are considered promising alternatives to the toxic compounds used in commercial infrared sensors. However, the direct use of pure CNT networks as infrared sensors for simple resistance read-outs results in low sensitivity values. In this work, MoS2 nanoflowers are composited with CNT networks via a facile hydrothermal process to increase the bolometric performance. The thermal diffusivity (α) against temperature (T) is measured using the transient electro-thermal (TET) technique in the range of 320 K to 296 K. The α-T curve demonstrates that the composite containing MoS2 nanoflowers provides significant phonon scattering and affects the intertube interfaces, decreasing the α value by 51%. As the temperature increases from 296 K to 320 K, the relative temperature coefficient of resistance (TCR) increases from 0.04%/K to 0.25%/K. Combined with the enhanced light absorption and strong anisotropic structure, this CNT–MoS2 composite network exhibits a more than 5-fold greater surface temperature increase under the same laser irradiation. It shows up to 18-fold enhancements in resistive responsivity ((Ron − Roff)/Roff) compared with the pure CNT network for a 1550 nm laser at room temperature (RT).

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Ion beam sputtered Ge–Si–O amorphous thin films for microbolometer infrared detectors and their application in earth sensors

Cited by 12 publications

References 32 publications

High-Accuracy, Compact Scanning Method and Circuit for Resistive Sensor Arrays

High-Accuracy, Compact Scanning Method and Circuit for Resistive Sensor Arrays

Performance Characterization of Infrared Detectors Based on Polymorphous Silicon‐Germanium (pm‐Si_xGe_1−x:H) Thin Films Deposited at Low Temperature

Preparation and Bolometric Responses of MoS2 Nanoflowers and Multi-Walled Carbon Nanotube Composite Network

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Ion beam sputtered Ge–Si–O amorphous thin films for microbolometer infrared detectors and their application in earth sensors

Cited by 12 publications

References 32 publications

High-Accuracy, Compact Scanning Method and Circuit for Resistive Sensor Arrays

High-Accuracy, Compact Scanning Method and Circuit for Resistive Sensor Arrays

Performance Characterization of Infrared Detectors Based on Polymorphous Silicon‐Germanium (pm‐SixGe1−x:H) Thin Films Deposited at Low Temperature

Preparation and Bolometric Responses of MoS2 Nanoflowers and Multi-Walled Carbon Nanotube Composite Network

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Product

Resources

About

Performance Characterization of Infrared Detectors Based on Polymorphous Silicon‐Germanium (pm‐Si_xGe_1−x:H) Thin Films Deposited at Low Temperature