Ion beam analysis of VLS grown Ge nanostructures on Si

Taraci, J. L.; Clement, T.; Dailey, Jeff; Drucker, Jeffery; Picraux, S. T.

doi:10.1016/j.nimb.2005.08.202

Cited by 7 publications

(5 citation statements)

References 7 publications

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“…For the case of VLS Ge nanowires, parasitic islands near the current collector were reported in a range of studies. [60][61][62][63][64][65] In our samples, with increasing growth time and with a higher growth temperature the parasitic Ge layers thickened.…”

Section: Resultsmentioning

confidence: 68%

“…This study is also the rst to examine the role of the parasitic thin lm layer sitting at the base of the nanowire arrays in establishing the cycling performance of Ge nanowires. Parasitic lms are widely reported in literature for VLS grown Si and Ge nanowires [59][60][61][62][63][64][65] and have been recently examined by Picraux et al 59 only for the case of Si. However their role remains unexplored for the fundamentally different case of Ge nanowires.…”

Section: Introductionmentioning

confidence: 99%

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Array geometry dictates electrochemical performance of Ge nanowire lithium ion battery anodes

et al. 2014

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Section: Resultsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Array geometry dictates electrochemical performance of Ge nanowire lithium ion battery anodes

et al. 2014

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“…The vapor diffuses into the metal until a saturated solution is generated and the material of choice precipitates forming nanowires. There are several modern examples using VLS to grow many different types of nanowires or other one-dimensional nanostructures [30][31][32][33][34]. One such variation is where a laser ablates a substrate containing a metal/semiconductor mixture to create a semiconductor/metal molten alloy [35][36][37].…”

Section: Synthesis Of Semiconductor Nanomaterialsmentioning

confidence: 99%

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

Grant¹,

Zhang²

2008

Annual Review of Nano Research

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This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials.Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties.Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.2

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“…One of the most popular way to determine exact quantitative elemental composition of thin films is the Rutherford backscattering spectrometry (RBS). However, the application of this method to systems with 3D topography can lead to distorted and broadened shapes of the element signatures in the spectra [1][2][3][4][5][6]. Consequently, it is essential to know how the given patterning method influences the relevance of the performed RBS measurements.…”

Section: Introductionmentioning

confidence: 99%

Influence of surface topography on RBS measurements: case studies of (Cu/Fe/Pd) multilayers and FePdCu alloys nanopatterned by self-assembly

Krupiński

Perzanowski

Zabila

et al. 2017

Adv. Nat. Sci: Nanosci. Nanotechnol.

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In this paper the influence of surface topography on Rutherford backscattering spectrometry (RBS) is discussed. (Cu/Fe/Pd) multilayers with total thickness of about 10 nm were deposited by physical vapor deposition on self-organized array of SiO2 nanoparticles with the size of 50 nm and 100 nm. As a reference, the multilayered systems were also prepared on flat substrates under the same conditions. After the deposition, morphology of the systems was studied by scanning electron microscopy (SEM), while chemical analysis was performed using Rutherford backscattering spectrometry. It was found that the RBS spectra and determined compositions for flat and patterned multilayers differ. The difference is discussed by taking into account the effect of additional inelastic scattering and energy straggling occurring due to developed topography of patterned systems. Then, the multilayers were annealed in 600 °C in order to obtain FePdCu alloy. The phenomenon of solid-state dewetting resulted in the formation of isolated alloy islands on the top of SiO2 nanoparticles. The SEM and RBS analysis were repeated showing correlation between the size distribution of obtained alloy islands and broadening of peaks appearing in RBS spectra.

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Ion beam analysis of VLS grown Ge nanostructures on Si

Cited by 7 publications

References 7 publications

Array geometry dictates electrochemical performance of Ge nanowire lithium ion battery anodes

Array geometry dictates electrochemical performance of Ge nanowire lithium ion battery anodes

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

Influence of surface topography on RBS measurements: case studies of (Cu/Fe/Pd) multilayers and FePdCu alloys nanopatterned by self-assembly

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