A rough surface morphology is shown to significantly amplify the light-induced change in water contact angle of a photoresponsive surface. Smooth Si surfaces and fractally rough Si nanowire surfaces grown on a Si substrate were studied, both coated with a hydrophobic monolayer containing photochromic spiropyran molecules. Under visible irradiation the spiropyran is in a closed, hydrophobic form, whereas UV irradiation converts the spiropyran to a polar, hydrophilic form, reducing the contact angle. The superhydrophobic nanowire surface both amplifies the light-induced contact angle change by a factor of 2 relative to a smooth surface and reduces the contact angle hysteresis. As a result the UV-induced advancing contact angle is lower than the receding contact angle under visible irradiation, allowing water drops to be moved solely under the influence of a UV−visible light gradient. The amplification of the reversible light-induced wetting angle change was predicted using the Wenzel model for fractally rough surfaces. The model and amplification effects are expected to apply to other types of stimuli-induced contact angle changes such as that by heat or electrical potentials.
The pressure and temperature dependencies for vapor-liquid-solid (VLS) growth of Ge nanostructures on Si using chemical vapor deposition are reported. Gold nanodots self-assembled by evaporation on clean hydrogen-terminated and heated Si substrates are used to seed the liquid eutectic VLS growth. Digermane pressures are varied from 4×10−5 to 1×10−2Torr and substrate temperatures from 400 to 600°C for heteroepitaxial growth on Si(111). Two types of nanostructures are identified, nanowires and nanopillars, with a transition from nanopillar growth to nanowire growth occurring with increasing pressure. Nanowires are characterized by rapid vertical growth, long-aspect-ratio structures, and linear dependence of the growth rate on pressure. At lower pressures a transition to nanopillars is observed; these exhibit both vertical and lateral growth with typical aspect ratios of 1:2. For Si(111) substrates nanowires grow epitaxially with their growth axis along the ⟨111⟩ direction. High-resolution transmission electron microscopy shows that the Ge nanowires are relaxed to their equilibrium lattice spacings a short distance from the Si substrate interface.
Abstract— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.
Organosiloxane based spin on planarizing dielectrics (PTS‐E and PTS‐R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane‐based material as a passivation layer for active matrix α‐Si thin film transistors (TFT) on both rigid and flexible substrates.
We report epitaxial growth of Ge nanopillars (NPs) on Si(100) by vapor-liquid-solid (VLS) growth from digermane. This growth morphology is characterized by short, low-aspect-ratio pillars and is markedly different from the long, narrow nanowires (NWs) previously reported for VLS growth. The NP growth mode occurs at low digermane pressures. It is attributed to surface-diffusion-induced lateral growth in combination with an insufficient Ge concentration gradient in the AuGe eutectic to catalyze NW growth. High resolution electron microscopy confirms that the NPs are epitaxial with the Si (100) substrate and are fully relaxed and strain free.
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