Nanopillar growth mode by vapor-liquid-solid epitaxy

Taraci, J. L.; Dailey, Jeff; Clement, T.; Smith, David J.; Drucker, Jeffery; Picraux, S. T.

doi:10.1063/1.1766076

Cited by 13 publications

(5 citation statements)

References 9 publications

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“…This rectifying behavior is consistent with that observed at bulk Au/Ge interfaces [34], where a large Schottky barrier of 0.59 eV is present, and is nearly independent of the type of metal due to strong Fermi level pinning close to the Ge valence band. Our observations are also consistent with atom-probe tomography measurements [33] and with high-resolution transmission electron microscopy which indicated an abrupt interface between the Au-catalyst nanoparticle and the Ge nanowires [35]. Fig.…”

Section: Au Catalyst-ge Nanowire Schottky Diodessupporting

confidence: 90%

Transport characterization in nanowires using an electrical nanoprobe

Talin

Léonard

Katzenmeyer

et al. 2010

Semicond. Sci. Technol.

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Electrical transport in semiconductor nanowires is commonly measured in a field effect transistor configuration, with lithographically defined source, drain, and in some cases, top gate electrodes. This approach is labor intensive, requires high-end fabrication equipment, exposes the nanowires to extensive processing chemistry, and places practical limitations on minimum nanowire length. Here we describe a simple method for characterizing electrical transport in nanowires directly on the growth substrate, without any need for post growth processing. Our technique is based on contacting nanowires using a nano-manipulator probe retrofitted inside of a scanning electron microscope. Using this approach we characterize electrical transport in GaN nanowires grown by catalyst-free selective epitaxy, as well as InAs and Ge nanowires grown by Au-catalyzed vapor solid liquid technique. We find that in situations where contacts are not limiting carrier injection (GaN and InAs nanowires), electrical transport transitions from Ohmic conduction at low bias, to space-charge limited conduction at higher bias. Using this transition and a theory of space charge limited transport which accounts for the high aspect ratio nanowires, we extract the mobility and the free carrier concentration. For Ge nanowires, we find that the Au catalyst forms a Schottky contact resulting in rectifying current-voltage characteristics, and which are strongly dependent on the nanowire diameter. This dependence arises due to increase in depletion width at decreased nanowire diameter and carrier recombination at the nanowire surface.

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Section: Au Catalyst-ge Nanowire Schottky Diodessupporting

confidence: 90%

Transport characterization in nanowires using an electrical nanoprobe

Talin

Léonard

Katzenmeyer

et al. 2010

Semicond. Sci. Technol.

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“…This rectifying behavior is consistent with that observed at bulk Au/Ge interfaces [11], where a large Schottky barrier of 0.59 eV is present, and is essentially independent of the type of metal because Ge has strong Fermi level pinning close to the valence band. Our observations are also consistent with atom-probe tomography measurements [12] and with high-resolution transmission electron microscopy [13] which indicated an abrupt interface between the Au catalyst nanoparticle and the Ge nanowires. It is tempting to analyze the rectifying behavior using conventional thermionic emission theory to extract the Schottky barrier.…”

supporting

confidence: 89%

Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

et al. 2009

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We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter.

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“…For nanowires grown axially at atmospheric pressure, it has been suggested that hydrogen termination from the pyrolysis of hydride precursors may block the adsorption site of the vapour [29] and promote nanowire growth. When the precursor was reduced at lower pressure, the hydrogen termination effect decreased, so the lateral growth led to the porous [30] or pillar [31] structure formation.…”

Section: Nanostructures Deposited On Nanopatterned Featuresmentioning

confidence: 99%

Plasma nanofabrications and antireflection applications

Shieh¹,

Lin²,

Yang³

2007

J. Phys. D: Appl. Phys.

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Plasma fabrication provides an approach to create nanostructured materials. We summarize recent studies on the quantum dot, nanograss, porous film and nanocone that have been developed using plasma methods to date and investigate the antireflection properties of the nanograss by spectrophotometric measurements and rigorous coupled-wave analyses. The results show that the reflection of silicon wafer etched for 40 min can be reduced below 4.5% in the range DUV to near-IR (200–900 nm), which agrees well with the simulation as the two-dimensional periodic pyramidal shapes with a period of 25 nm are used to mimic the nanograss surface. With these novel nanostructures and interesting properties, plasma processes will be increasingly significant to nanofabrication, especially when process compatibility is necessary for Si technology.

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Nanopillar growth mode by vapor-liquid-solid epitaxy

Cited by 13 publications

References 9 publications

Transport characterization in nanowires using an electrical nanoprobe

Transport characterization in nanowires using an electrical nanoprobe

Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

Plasma nanofabrications and antireflection applications

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