Ion assisted deposition of oxynitrides of aluminum and silicon

Abstract

Reactive ion etching of silicon oxynitride formed by plasmaenhanced chemical vapor deposition Effect of reactiveion bombardment on the properties of silicon nitride and oxynitride films deposited by ionbeam sputtering J. Appl. Phys. 75, 8145 (1994); 10.1063/1.357027 Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/oxynitride films versus substrate temperatureOptical thin films of nitrides, oxynitrides, and oxides of aluminum and silicon were deposited using ion assisted deposition. Coatings were deposited by evaporation of either AlN or Si with .,imultaneous bombardment with 300-eV ions of nitrogen, oxygen, or a mixture of oxygen and nitrogen. The chemical composition of the coatings was varied by varying the gas mixture in the ion beam, making it possible to vary the index ofrefraction of the coatings during deposition from 1.44 to 2.1 in the case of silicon oxynitrides, and 1.62 to 2.1 in the case of aluminum oxynitrides. Optical properties and environmental stability of the coatings were examined. Coatings are stable under severe conditions of humidity and temperature.

Optical and mechanical properties of nanocrystalline aluminum oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

“…The synthesis of AlON films has been commonly reported using physical vapor deposition (PVD), such as ion-beam-assisted evaporation and sputtering [1][2][3]5,[8][9][10]. The optical, mechanical and gas barrier properties of the AlON films have also been investigated [1][2][3]9,11].…”

“…AlON films are widely applied as protective coatings against wear, diffusion and corrosion [1][2][3], optical coatings [4][5], optoelectronics, microelectronics [6,7], and other fields of technology. This is due to the possibility for a broad combination of the physical and chemical properties of the oxynitride films with variable concentrations of aluminum, oxygen, and nitrogen.…”

Oxygen Control on Nanocrystal-AlON Films by Reactive Gas-Timing Technique R.F. Magnetron Sputtering and Annealing Effect

“…Aluminum Oxynitride (AlON) is a transparent polycrystalline ceramic material of high strength and hardness. AlON films are widely applied as protective coatings against wear, diffusion and corrosion [1][2][3], optical coatings [4,5], optoelectronics, and other fields of technology. This is due to the possibility for a broad combination of the physical and chemical properties of the oxynitride films with variable concentrations of aluminum, oxygen, and nitrogen.…”

“…The film properties can be tailored between those of pure aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN), depending on different applications. The synthesis of AlON films has been commonly reported using physical vapor deposition (PVD), such as ion-beam-assisted evaporation and sputtering [1][2][3]5]. The optical, mechanical and gas barrier properties of the AlON films have also been investigated [1][2][3].…”

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

“…Dual beam spectrophotometers were used for transmission measurements of SiO X N Y and AlO X N Y films deposited on fused silica (quartz) substrates and the refractive index was calculated from the difference between the half-wave and the quarter-wave points with no further illustrated physical relations [42]. SiO 2 films were deposited on sapphire substrates.…”