Optical and mechanical properties of nanocrystalline aluminum oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

Epitaxial growth and superhardness effect of TiN/AlON nanomultilayers synthesized by reactive magnetron sputtering technology

“…Based on this plot, a N 2 partial pressure of about 8.0 × 10 −2 Pa (27% of the total pressure) was adopted to prepare nanomultilyers which yielded AlON an atomic ratio of N and (N + O) (n N /n N+O ) of about 0.22. XRD analysis revealed, on the other hand, that all the AlON monolithic films deposited under different N 2 partial pressures were amorphous, in well agree with Xiao et al's results [14,15] who deposited AlON films by using CVD method. In addition, Xiao et al reported that by using N atoms to partially take the place of O atoms, superior mechanical properties as compared to Al 2 O 3 and increased oxidation resistance temperature as high as 1200 • C could be achieved as well.…”

Crystallization of AlON layers and its effects on the microstructure and hardness of reactively synthesized ZrN/AlON nanomultilayers

“…As for the AlON film deposited under nitrogen partial pressure of 0.02 Pa, the same condition employed in the multilayer preparation, the atom ratio of nitrogen to oxygen, N/O, equals just one-ninth. XRD analysis results revealed that all the AlON films prepared in this paper exist as amorphous, close to the results that Xiao and Diang [10] found in the AlON films prepared by the CVD method. Furthermore, a lot of research [10,11] has shown that the mechanical properties of AlON are better than those of Al 2 O 3 and it is also stable under temperatures below than 1200 • C.…”

“…XRD analysis results revealed that all the AlON films prepared in this paper exist as amorphous, close to the results that Xiao and Diang [10] found in the AlON films prepared by the CVD method. Furthermore, a lot of research [10,11] has shown that the mechanical properties of AlON are better than those of Al 2 O 3 and it is also stable under temperatures below than 1200 • C.…”

Controlled Growth of C-Oriented AlN Thin Films: Experimental Deposition and Characterization

“…Thus, the addition of oxygen would allow to tailor the properties of the AlN x O y films between those of pure aluminium oxide (Al 2 O 3 ) and nitride (AlN), where the concentration of Al, N and O can be varied depending on the specific application being pursued (Borges et al, 2010;Brien & Pigeat, 2008;Ianno et al, 2002;Jang et al, 2008). Combining some of their advantages by varying the concentration of Al, N and O, aluminium oxynitride films (AlNO) can produce applications in corrosion protective coatings, optical coatings, microelectronics and other technological fields (Borges et al, 2010;Erlat et al, 2001;Xiao & Jiang, 2004). Thus, the study of deposition and growth of AlN films with the addition of oxygen is a relevant subject of scientific and technological current interest.…”