(Invited) Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

Poodt, Paul; Lankhorst, Adriaan; Roozeboom, F.; Tiba, Veronica; Spee, Karel; Maas, D. Diederik; Vermeer, Ad

doi:10.1149/1.3485278

Cited by 3 publications

(5 citation statements)

References 13 publications

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“…Deposition rates per pass are usually 10-20% higher than what is usual for conventional ALD (6). As distances are very small, the substrate can be moved very fast under the spatially separated gas streams, leading to reported deposition rates of Al 2 O 3 in excess of 60nm/minute (6). This is roughly 100 times faster than typical deposition rates with conventional single wafer ALD.…”

Section: Throughput Improvements On Ald Reactorsmentioning

confidence: 96%

“…This has motivated several other researchers to look into alternative and potentially faster methods to deposit ALD Al 2 O 3 passivation films. Notably large batch systems with over 1000 crystalline solar cells being coated in one run (35), and in-line atmospheric systems (5,6) are being explored (see also the next section).…”

Section: Non Ic Applicationsmentioning

confidence: 99%

“…e) Atmospheric Pressure. This is a variant of spatial gas separation (d), but quite distinct, in that at atmospheric pressure gas diffusion is a lot slower and spatial separation can be done on substantially smaller length scales (5,6). Reactants, purges and sometimes also pump outs are united in a complex gas distribution assembly that is maintained at very close proximity (order 0.1 mm) to the substrate surface, usually using gas bearings.…”

Section: Throughput Improvements On Ald Reactorsmentioning

confidence: 99%

“…The high pressure ensures fully saturated surface reactions in short times. Deposition rates per pass are usually 10-20% higher than what is usual for conventional ALD (6). As distances are very small, the substrate can be moved very fast under the spatially separated gas streams, leading to reported deposition rates of Al 2 O 3 in excess of 60nm/minute (6).…”

Section: Throughput Improvements On Ald Reactorsmentioning

confidence: 99%

“…in a batch furnace or a multi-station single wafer tool). Another new technology in development is that of spatially separated ALD (5,6), which promises even more economical deposition rates of around 60nm/minute, potentially over large areas.…”

Section: Introductionmentioning

confidence: 99%

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(Invited) Current and Future Applications of ALD in Micro-Electronics

Raaijmakers¹

2011

ECS Trans.

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This paper describes the status of current and future applications of Atomic Layer Deposition (ALD) and Plasma Enhanced ALD (PEALD) in the field of Micro-electronics. Substantial expansion of the ALD market is expected in the coming decade, both in IC manufacturing, but also in adjacent non-IC applications. Several techniques will be described that work around the relatively slow deposition rate of ALD.

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Section: Throughput Improvements On Ald Reactorsmentioning

confidence: 96%

Section: Non Ic Applicationsmentioning

confidence: 99%

Section: Throughput Improvements On Ald Reactorsmentioning

confidence: 99%

Section: Throughput Improvements On Ald Reactorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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(Invited) Current and Future Applications of ALD in Micro-Electronics

Raaijmakers¹

2011

ECS Trans.

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Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

Franke

Baumkötter

Monka

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Alumina layers were grown from trimethylaluminum (TMA) and water, ozone as well as an oxygen plasma as co-reactants in low temperature spatial atomic layer deposition (ALD). The influence of the amount of precursor, the precursor exposure duration, and substrate temperature were investigated with respect to the growth rate while employing different oxygen sources. The TMA/water process provided alumina (AlOx) films with superb film quality as shown by infrared measurements. Ozone-based processes allowed lower substrate temperatures. Nevertheless, carbon residuals in different binding states were found within the bulk material. However, the carbon impurities have no impact on the barrier performance, since 50 nm AlOx grown by TMA either with water or ozone exhibited a water vapor transition rate in the range of 10−6 g/m2/day. However, when our home-built microwave plasma source was applied in a remote configuration, the water vapor transition rate was one order of magnitude higher due to a reduction in film quality. Furthermore, a TMA utilization of ∼50% demonstrated the highly cost-effective spatial ALD concept as a deposition technique which is very suitable for industrial deposition applications.

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Silicon stabilized alumina thin films as gas permeation barriers prepared by spatial atomic layer deposition

et al. 2017

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The growth mechanism and the barrier performance of Al2O3, SiO2 and a binary Si-Al oxide (SiAlxOy) deposited by spatial atomic layer deposition (SALD) were investigated. Alumina and silica were deposited by TMA and BDEAS with growth-per-cycles (GPC) of 0.16 and 0.013 nm, respectively. Interestingly a significant higher GPC of 0.225 nm was found for SiAlxOy. Although alumina in principle has excellent barrier properties, the films easily degraded and lose their barrier performance if exposed to water vapor at elevated temperatures. Therefore, the barrier performances of these films were investigated under harsh environment conditions. We found that the barrier performance of 100 nm Al2O3 failed in less than one day at 70 °C with 70 % relative humidity, whereas 100 nm SiAlxOy sustained for approximately one week. However, the resistivity of those barrier systems was significantly improved by inserting a single 3.3 nm SiO2 layer into the barrier films. In this way the barrier system withstands up to 5 months and the intrinsic water vapor transition rate was reduced by two to three orders of magnitude to ∼10-4 g/m2/day at these tough aging conditions.

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(Invited) Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

Cited by 3 publications

References 13 publications

(Invited) Current and Future Applications of ALD in Micro-Electronics

(Invited) Current and Future Applications of ALD in Micro-Electronics

Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

Silicon stabilized alumina thin films as gas permeation barriers prepared by spatial atomic layer deposition

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