(Invited) Current and Future Applications of ALD in Micro-Electronics

Raaijmakers, Ivo J.

doi:10.1149/1.3633649

Cited by 46 publications

(38 citation statements)

References 13 publications

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“…Other advantages stemming from the self‐limiting reactions include excellent reproducibility and scalability, and relatively low deposition temperatures, typically 100 to 400 °C. These benefits have led to the use of ALD in semiconductor and other industries . However, successful use of ALD relies on finding precursors fulfilling stringent requirements, such as high reactivity and thermal stability…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

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Semiconducting 2D materials, such as SnS , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS films has remained a great challenge. Herein, continuous wafer-scale 2D SnS films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.

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Section: Introductionmentioning

confidence: 99%

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

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“…ALD is a vapor phase deposition route based on self-limiting chemical reactions, allowing for the preparation of nanomaterials with controlled structures at the nanoscale [36,[40][41][42][43]. The conformality, uniformity and atomic level control of the films that can be achieved using this technique makes it useful for a wide range of applications, especially microelectronics, [44] but also biosensing, [45] catalysis [46,47] and membranes. [48] Nowadays it is becoming a promising deposition method for growing uniform thin and ultra-thin films, especially in the cases where precise film thickness control, high reproducibility, thickness uniformity, and excellent conformity are required [45,49].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires

Graniel

Fedorenko

Viter

et al. 2018

Materials Science and Engineering: B

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In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7-14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study of photoluminescence (PL) spectra of SiNWs/ZnO samples showed the domination of defect emission bands, pointing to deviations of the stoichiometry of the prepared 3D ZnO nanostructures. Reduction of the PL intensity of the SiNWs/ZnO with the increase of SiNWs etching time was observed, depicting an advanced light scattering with the increase of the nanowire length. These results open up new prospects for the design of electronic and sensing devices.

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“…In some cases, there may be channels into the surface, but the aspect ratio of these channels-the ratio of the channel depth to width-is rarely greater than 100 [39,40]. The desired films are also reasonably thick, usually greater than 2 nm and often up to 20 nm [39,40]. For an ALD film growth rate of 0.04 nm/cycle, even a 2-nm film would require 50 cycles, whereas a 20-nm film would require 500 cycles.…”

Section: Design Considerations For Semiconductor Applicationsmentioning

confidence: 99%

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

et al. 2018

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Atomic layer deposition (ALD) offers exciting possibilities for controlling the structure and composition of surfaces on the atomic scale in heterogeneous catalysts and solid oxide fuel cell (SOFC) electrodes. However, while ALD procedures and equipment are well developed for applications involving flat surfaces, the conditions required for ALD in porous materials with a large surface area need to be very different. The materials (e.g., rare earths and other functional oxides) that are of interest for catalytic applications will also be different. For flat surfaces, rapid cycling, enabled by high carrier-gas flow rates, is necessary in order to rapidly grow thicker films. By contrast, ALD films in porous materials rarely need to be more than 1 nm thick. The elimination of diffusion gradients, efficient use of precursors, and ligand removal with less reactive precursors are the major factors that need to be controlled. In this review, criteria will be outlined for the successful use of ALD in porous materials. Examples of opportunities for using ALD to modify heterogeneous catalysts and SOFC electrodes will be given.

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(Invited) Current and Future Applications of ALD in Micro-Electronics

Cited by 46 publications

References 13 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

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(Invited) Current and Future Applications of ALD in Micro-Electronics

Cited by 46 publications

References 13 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

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Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films