Abstract:The growth mechanism and the barrier performance of Al2O3, SiO2 and a binary Si-Al oxide (SiAlxOy) deposited by spatial atomic layer deposition (SALD) were investigated. Alumina and silica were deposited by TMA and BDEAS with growth-per-cycles (GPC) of 0.16 and 0.013 nm, respectively. Interestingly a significant higher GPC of 0.225 nm was found for SiAlxOy. Although alumina in principle has excellent barrier properties, the films easily degraded and lose their barrier performance if exposed to water vapor at e… Show more
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