(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Abstract

III-nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The lightemitting diodes based on III-nitrides revolutionize the solid-state lighting industry. III-nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the IIInitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated.

Recent progress in III-nitride nanosheets: properties, materials and applications

“…Moreover, III-nitride nanosheets also have a high breakdown voltage, which is expected to apply to higher performance power electronic devices [55]. Furthermore, III-nitride nanosheets exhibit orbitally driven ultra-low thermal conductivity with anomalous temperature-dependent [56,57], giving them broad application prospects for energy conversion, such as thermoelectricity [58]. Therefore, III-nitride nanosheets are promising materials for application in electronic and optoelectronic devices [59].…”

Metallized Phosphane–Ene Polymer Networks as Precursors for Ceramics with Excellent Shape Retention

“…The area of spintronic semiconductors is still in its infancy in terms of identifying materials that have the desired properties. To date, materials of interest have been composed of elements spanning the periodic table, and nanoscale features display superior spintronic properties relative to the same bulk materials. − One of the barriers to research on nanoscale spintronic has been the difficulty in fabricating material candidates into the appropriate shapes and length scale for testing. For doped materials, it is difficult to achieve doping uniformity throughout small-scale features .…”

Stabilization of Guanidinate Anions [CN3]5− in Calcite‐Type SbCN3

“…The search for novel synthetic routes to solid-state nitrides is important due to the broad range of potential applications for these materials. [1,2] However, the synthesis of N-based materials is challenging due to the stability of dinitrogen molecule and therefore nitrides are significantly outnumbered by other classes of compounds. [3] Among various synthesis methods, like self-propagating combustion reactions, ammonolysis, solid-state metathesis, [1,2] high-pressure techniques provide unique opportunity to achieve compounds with very high nitrogen content, as corroborated by previous studies on polynitrides.…”

“…[1,2] However, the synthesis of N-based materials is challenging due to the stability of dinitrogen molecule and therefore nitrides are significantly outnumbered by other classes of compounds. [3] Among various synthesis methods, like self-propagating combustion reactions, ammonolysis, solid-state metathesis, [1,2] high-pressure techniques provide unique opportunity to achieve compounds with very high nitrogen content, as corroborated by previous studies on polynitrides. [4][5][6][7][8][9][10][11] While high-pressure synthetic routes to binary nitrides using laser-heated diamond anvil cells (DACs) are relatively well established, one of the remaining fundamental challenges of the highpressure chemistry is to explore routes to stable ternary nitrogen-rich nitrides.…”