(INVITED)A review on rare-earth activated SnO2-based photonic structures: Synthesis, fabrication and photoluminescence properties

Tran, Lam Thi Ngoc; Szczurek, Anna; Łukowiak, Anna; Chiasera, Alessandro

doi:10.1016/j.omx.2022.100140

Cited by 8 publications

(3 citation statements)

References 96 publications

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“…As a novel multifunctional semiconductor with a direct bandgap of ∼3.9 eV [18], SnO 2 is extensively investigated in lightemitting devices (LEDs), solar cells, and sensors [19][20][21], which has not yet been reported on the rare-earth-doped EL device. Due to an appropriate bandgap, excellent optoelectronic properties, low maximum phonon energy [22], and high rare earth doping concentration [23], SnO 2 could be a suitable Er-doped material to realize the NIR EL.…”

Section: Introductionmentioning

confidence: 99%

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Wu,

Pang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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1.54 μm telecom-wavelength electroluminescence is achieved by erbium-doped SnO2 film devices fabricated on silicon wafers. Employing fluorine as a co-dopant, the electroluminescence intensity is increased due to enhanced electrical injection of the device and improved optical activity of the erbium ions. The realization of electroluminescence can be ascribed to the inelastic impact with erbium ions through the hot electrons originating from different electrical conduction mechanisms, by controlling the SiOx interlayer thickness. Herein, the device based on the co-doped film presents a low turn-on voltage of 4.4 V. Via further regulating the annealing condition, the co-doped device obtains a maximum optical power density of 92.2 μW/cm2 at 1.55 μm, with an operating lifetime of more than 190 h in the atmosphere. This work clarifies the broad application prospects for SnO2 devices in silicon photonics technology.

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Section: Introductionmentioning

confidence: 99%

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Wu,

Pang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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“…Semiconducting oxide nanomaterials with tunable shape and size play a significant role in diverse applications such as bioimaging [23,24], drug delivery [25,26], optoelectronics [27,28], environmental studies [29][30][31] and energy storage [27,32]. Tin oxide (SnO 2 ), a widely recognized n-type semiconductor, has been extensively documented for its appropriate bandgap, which ranges from ∼3.6 to 4.0 eV [33][34][35].…”

Section: Introductionmentioning

confidence: 99%

Miniaturized droplets flow reactor for one-step highly controlled synthesis of SnO₂ quantum dots at room temperature

Katoch,

Shanmugam,

Rohal

et al. 2024

Eng. Res. Express

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In recent years, the conventional methods of synthesizing nanomaterials have been surpassed by the emergence of the microfluidics route, which has brought forth numerous advantages and transformed the domain of nanomaterial synthesis. However, the synthesis of semiconducting oxide nanomaterials, specifically Tin oxide (SnO2), remains a crucial area of research due to its remarkable advantages as a viable alternative to toxic and costly materials. Additionally, SnO2 quantum dots (QDs) exhibit immense potential across a diverse range of applications due to their exceptional optical and electrical properties. The existing synthesis methods for SnO2 QDs are either time-consuming or involve high-temperature conditions. To address these challenges, droplet-based microfluidic technique has emerged as a promising approach for the controlled synthesis of various semiconducting nanomaterials. This article highlights the synthesis of SnO2 QDs with tunable size through the utilization of a droplet-based microfluidic technique, providing precise control over droplet volumes. X-ray diffraction analysis verified the presence of rutile-type tetragonal structure in SnO2 QDs. From the transmission electron microscopy analysis, the average particle size was calculated to be 1.90 nm, 2.09 nm and 2.63 nm for the volume of droplet corresponding to 33.25 µl, 27.84 µl and 18.25 µl respectively. Furthermore, with a decrease in particle size a tunabilty in optical bandgap, from 4.60 eV to 4.00 eV was observed. This work provides insights into the influence of droplet volume on the particle size which in turn affects the associated properties of SnO2 QDs in a droplet-based microfluidic synthesis system.

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“…[3][4][5] Currently, conducting polymers, such as PEDOT:PSS, polyaniline (PANI), polythiophene, and polycarbazole (PCz), have been extensively used in organic optoelectronic devices and supercapacitor applications. [6][7][8] To enhance the optical, electrical, and thermal properties of undoped organic materials by doping and compositing, inorganic semiconducting materials, such as zinc oxide (ZnO), 9 zirconium oxide (ZrO 2 ), 10 tin oxide (SnO 2 ), 11 cadmium sulfate (CdS) 12 and molybdenum disulfate (MoS 2 ) 13 and zinc sulfate (ZnS), are extensively used. 14 Similar to LEDs, electroluminescence is the working principle of OLEDs.…”

Section: Introductionmentioning

confidence: 99%

FRET mechanism to enhance the quantum yield of the PCz/gC₃N₄ nanocomposite, an emissive material for OLED applications

Bauri

Choudhary

2023

Phys. Chem. Chem. Phys.

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(INVITED)A review on rare-earth activated SnO2-based photonic structures: Synthesis, fabrication and photoluminescence properties

Cited by 8 publications

References 96 publications

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Miniaturized droplets flow reactor for one-step highly controlled synthesis of SnO₂ quantum dots at room temperature

FRET mechanism to enhance the quantum yield of the PCz/gC₃N₄ nanocomposite, an emissive material for OLED applications

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(INVITED)A review on rare-earth activated SnO2-based photonic structures: Synthesis, fabrication and photoluminescence properties

Cited by 8 publications

References 96 publications

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO2 film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO2 film devices

Miniaturized droplets flow reactor for one-step highly controlled synthesis of SnO2 quantum dots at room temperature

FRET mechanism to enhance the quantum yield of the PCz/gC3N4 nanocomposite, an emissive material for OLED applications

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Product

Resources

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Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Miniaturized droplets flow reactor for one-step highly controlled synthesis of SnO₂ quantum dots at room temperature

FRET mechanism to enhance the quantum yield of the PCz/gC₃N₄ nanocomposite, an emissive material for OLED applications