2006
DOI: 10.1016/j.mee.2005.10.050
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Investigations on high temperature polyimide potentialities for silicon carbide power device passivation

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Cited by 28 publications
(13 citation statements)
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“…• C) [2][3][4][5]. Nevertheless, little is known about the electrical properties of the thermo-stable polymers above 200…”
Section: Introductionmentioning
confidence: 99%
“…• C) [2][3][4][5]. Nevertheless, little is known about the electrical properties of the thermo-stable polymers above 200…”
Section: Introductionmentioning
confidence: 99%
“…Its critical field is around 5 MV/cm. One of its use is for second passivation in the microelectronic devices and particularly for high voltage and high temperature SiC devices [25], which encourages the use of this material is the facility of the deposit and its permittivity very close to the silicon oxide (≈ 3) that's mean, smaller than that of diamond (≈5.7).…”
Section: New Termination Architecturementioning
confidence: 99%
“…The flexible Print-Circuit Board was widely used in the electronic devices in order to reduce the size of devices. Polyimide (PI) that serves as a typical kind of engineering polymer material with advantages of high temperature resistance (400 o C), low temperature tolerance (-269 o C), radiation resistance, flexibility and excellent dielectric properties, has been used for the Print-Circuit Board [1][2]. For the flexible using, the size and weight of the electronic devices have been reduced every year, so it is necessary to reduce the thickness of the Print-Circuit Board used for electronic devices.…”
Section: Introductionmentioning
confidence: 99%