High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Abstract

Using finite element simulations with Sentaurus TCAD (Technology Computer-Aided Design) software, a progress from simple and classic termination for a Schottky diode to new topology termination has been studied in this paper. A polyimide trench under field plate termination has been used. The efficiency increases from 67% for a simple field plate with optimum parameters up to 97%. The maximum electric field in the termination dielectric has been evaluated also. A wide study of the termination geometry has been made in order to extract the optimum parameters in two directions. The first one is to obtain a high efficiency regarding the breakdown voltage, and the second one is to have the minimum electric field peak at the termination edge.

Diamond semiconductor performances in power electronics applications

“…Indeed, reaching higher electric field, closer to the theoretical 1D breakdown, will help to increase the doping level of the drift layer and therefore reducing even further the on-state losses. Innovative solutions have been proposed for diamond junction terminations [47]- [49], which must be further investigated and fabricated.…”

Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

“…Such experimental approaches are important; however, a simulation technology for diamond still needs to be developed. Basic parameters and models for diamond devices have been discussed [19]; a simulation of junction termination structures in diamond Schottky barrier diodes (SBDs) was discussed in [20,21]; simulation models for diamond bipolar devices were analyzed and discussed in detail in [22]; and, three-dimensional simulations of depleted Schottky PIN diamond diodes were performed in [23]. A quantum simulation of a nitrogen-terminated diamond (111) surface has also been reported [24], and a diamond Schottky PIN and SBD have been simulated with breakdown voltages from 70 to 5000 V [4].…”