Investigations of High-Performance GaAs Solar Cells Grown on Ge–Si&amp;lt;tex&amp;gt;$_1-xhbox Ge_ x$&amp;lt;/tex&amp;gt;–Si Substrates

Andre, C.; Carlin, John A.; Boeckl, John; Wilt, David M.; Smith, Mark A.; Pitera, Arthur J.; Lee, Minjoo Larry; Fitzgerald, Eugene A.; Ringel, S. A.

doi:10.1109/ted.2005.848117

Cited by 80 publications

(46 citation statements)

References 13 publications

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“…Insertion of dislocation ilter layers, such as a strained layer superlattice [44] or thin strained layers [45], can facilitate the annihilation of threading dislocations thereby minimize intrusion of dislocations in the active layers of interest. Growth of compositionally graded bufers (e.g., SiGe, GaAsP) [46][47][48] to bridge the lattice constant between Si and GaAs is another approach that has been heavily investigated. Achieving high strain relaxation while maintaining a low threading dislocation density are igures of merit of such metamorphic graded bufers.…”

Section: Wafer-scale Hetero-epitaxial Growth Of Iii-v Thin Ilms On Simentioning

confidence: 99%

“…Motivated by the development of III-V channel MOSFETs for high-performance and low-power logic applications, Huang et al [54] and Orzali et al [55] reported epitaxy of smooth In 0.53 Ga 0. 47 As layers on 300 mm Si wafers using metamorphic InP/GaAs bufers by MOCVD. The GaAs/InP metamorphic bufer was reduced to ∼860 nm in thickness, among the thinnest in the literature.…”

Section: Wafer-scale Hetero-epitaxial Growth Of Iii-v Thin Ilms On Simentioning

confidence: 99%

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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

113

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: Wafer-scale Hetero-epitaxial Growth Of Iii-v Thin Ilms On Simentioning

confidence: 99%

Section: Wafer-scale Hetero-epitaxial Growth Of Iii-v Thin Ilms On Simentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

113

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“…Very often, a Ge template layer is grown between the Si substrate and GaAs active layer to accommodate the lattice mismatch between Si and GaAs [59,60]. The discussion of these advanced approaches goes beyond the scope of this chapter.…”

Section: Thin Film Solar Cellsmentioning

confidence: 99%

Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers

Poortmans

2006

Thin Film Solar Cells

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“…For these reasons different studies have been carried out to integrate Ge on Si with only a low density of defects in the active region [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

Calabrese¹,

Baricordi²,

Bernardoni³

et al. 2014

AIP Conference Proceedings

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Abstract.A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast -thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

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Investigations of High-Performance GaAs Solar Cells Grown on Ge–Si<tex>$_1-xhbox Ge_ x$</tex>–Si Substrates

Cited by 80 publications

References 13 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

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