Investigation of the Thermal Recovery From Reset Breakdown of a SiN<i>
                     <sub>x</sub>
                  </i>-Based RRAM

Hong, Kyungho; Min, Kyung Kyu; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Jaewoong; Choi, Yeon-Joon; Kim, Chae Soo; Lee, Jae Yoon; Kim, Sungjun; Cho, Seongjae; Park, Byung‐Gook

doi:10.1109/ted.2020.2976106

Cited by 11 publications

(4 citation statements)

References 27 publications

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“…The relative contribution of these current paths to the total LRS current is influenced by the strength of the metallic filament connection within the dielectric layer. Therefore, the total temperature dependence of the resistance of the CBRAM is determined by the balance between the current flowing through the dielectric and the metallic filament; a negative correlation to the former and a positive correlation to the latter . According to Figure b, both negative and positive temperature dependence of the LRS resistance are measured.…”

Section: Resultsmentioning

confidence: 97%

“…Therefore, the total temperature dependence of the resistance of the CBRAM is determined by the balance between the current flowing through the dielectric and the metallic filament; a negative correlation to the former and a positive correlation to the latter. 57 According to Figure 5b, both negative and positive temperature dependence of the LRS resistance are measured. However, the dominant correlation is positive, which is a typical characteristic observed in a metallic resistor.…”

Section: Tem Observation Of the Co Pillar Growthmentioning

confidence: 99%

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Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Choi

Bang

Kim

et al. 2023

ACS Appl. Electron. Mater.

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Conductive-bridging random access memory (CBRAM) using a cobalt (Co) electrode has recently featured a CMOS-compatible process, excellent data retention, and a sub-μA operating current level, which are difficult to achieve by conventional CBRAM. However, the resistive switching (RS) mechanism of Co CBRAM has not been extensively explored compared to that of the conventional CBRAM cells using Ag, Cu, or Ni as active metal electrodes. Because only implicit inferences based on electrical measurements have been made, the formation of Co filaments is not yet clearly understood. This study presents evidence of Co filament formation in Co/10 nm SiO x /TiN resistive random access memory (RRAM) using direct transmission electron microscopy (TEM) observations. Co protrusions larger than 5 nm are observed, and their exact atomic composition is investigated by spectroscopy. We explain the RS operation of Co/SiO x /TiN cells based on the Co electromigration-mediated filament development process through Co electrode deformation, protrusion, and subsequent Co conductive bridge formation. An asymmetric RS operation and negative temperature correlation of the resistance are found in low resistance state (LRS) cells, which further supports the Co-involved RS operation in Co/SiO x /TiN devices.

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Section: Resultsmentioning

confidence: 97%

Section: Tem Observation Of the Co Pillar Growthmentioning

confidence: 99%

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Choi

Bang

Kim

et al. 2023

ACS Appl. Electron. Mater.

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“…36 Moreover, the metallic behavior is confirmed by the temperature dependence of Ti/a-BN/Si devices in the low-resistance state (LRS) following a positive SET process with high compliance current (Figure S4). 60 B vacancies inside the BN layer can also be involved in the resistive switching. The gradual switching suggests that multiple filaments can be ruptured sequentially by the applied voltage.…”

Section: ■ Experimental Proceduresmentioning

confidence: 99%

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Lee

Ryu

Kim

et al. 2020

ACS Appl. Mater. Interfaces

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In this study, the resistive switching and synaptic properties of a complementary metal-oxide semiconductorcompatible Ti/a-BN/Si device are investigated for neuromorphic systems. A gradual change in resistance is observed in a positive SET operation in which Ti diffusion is involved in the conducting path. This operation is extremely suitable for synaptic devices in hardware-based neuromorphic systems. The isosurface charge density plots and experimental results confirm that boron vacancies can help generate a conducting path, whereas the conducting path generated by a Ti cation from interdiffusion forms is limited. A negative SET operation causes a considerable decrease in the formation energy of only boron vacancies, thereby increasing the conductivity in the low-resistance state, which may be related to RESET failure and poor endurance. The pulse transient characteristics, potentiation and depression characteristics, and good retention property of eight multilevel cells also indicate that the positive SET operation is more suitable for a synaptic device owing to the gradual modulation of conductance. Moreover, pattern recognition accuracy is examined by considering the conductance values of the measured data in the Ti/a-BN/Si device as the synaptic part of a neural network. The linear and symmetric synaptic weight update in a positive SET operation with an incremental voltage pulse scheme ensures higher pattern recognition accuracy.

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“…According to the references [ 8 , 9 ], the precise control of ion migration in the resistive switching devices is the performance selection criteria for neuromorphic applications. However, the realization of resistive switching from TS to MS by tuning the Si dangling bond conductive pathway in Si-based RRAM devices is less reported [ 25 , 26 , 27 , 28 , 29 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory

Leng

Zhu

et al. 2022

Nanomaterials

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As the building block of brain-inspired computing, resistive switching memory devices have recently attracted great interest due to their biological function to mimic synapses and neurons, which displays the memory switching or threshold switching characteristic. To make it possible for the Si-based artificial neurons and synapse to be integrated with the neuromorphic chip, the tunable threshold and memory switching characteristic is highly in demand for their perfect compatibility with the mature CMOS technology. We first report artificial neurons and synapses based on the Al/a-SiNxOy:H/P+-Si device with the tunable switching from threshold to memory can be realized by controlling the compliance current. It is found that volatile TS from Al/a-SiNxOy:H/P+-Si device under the lower compliance current is induced by the weak Si dangling bond conductive pathway, which originates from the broken Si-H bonds. While stable nonvolatile MS under the higher compliance current is attributed to the strong Si dangling bond conductive pathway, which is formed by the broken Si-H and Si-O bonds. Theoretical calculation reveals that the conduction mechanism of TS and MS agree with P-F model, space charge limited current model and Ohm’s law, respectively. The tunable TS and MS characteristic of Al/a-SiNxOy:H/P+-Si device can be successfully employed to mimic the biological behavior of neurons and synapse including the integrate-and-fire function, paired-pulse facilitation, long-term potentiation and long-term depression as well as spike-timing-dependent plasticity. Our discovery supplies an effective way to construct the neuromorphic devices for brain-inspired computing in the AI period.

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Investigation of the Thermal Recovery From Reset Breakdown of a SiN _x -Based RRAM

Cited by 11 publications

References 27 publications

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory

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Investigation of the Thermal Recovery From Reset Breakdown of a SiN x -Based RRAM

Cited by 11 publications

References 27 publications

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory

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Investigation of the Thermal Recovery From Reset Breakdown of a SiN _x -Based RRAM