Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

“…A * value obtained from the temperature dependence of the I − V characteristics may be affected by the lateral inhomogeneity of the barrier, and the fact that it is different from the theoretical value may be connected to a value of the real effective mass that is different from the calculated one. Therefore, these undesirable findings clearly indicate the deviation from pure TE current mechanism and hence further investigations are required to understand the observed behavior [15,61,[71][72][73]77,96,153,[180][181][182].…”

“…Furthermore, this is more pronounced at lower temperatures, as can be seen from Figure 28. Since Φ cv B is the mean barrier height which approximately equals to the lateral homogeneous barrier height, as can be seen in [123,225], the measured SBH for SB diode will be related to the measurement method.The presence of one or several of some effects which cause nonideality of the diode parameters can make difficult an accurate determination of the Φ cv B SBH [21,73,200,225,232]. Osvald et al [214] have simulated the forward and reverse biases C − V dependence of inhomogeneous SBDs.They have concluded the results that inhomogeneous SBDs which have the mean BH equal to the BHs of equivalent homogeneous diodes have very similar C − V characteristics and differ merely remarkably only at forward bias, and that the C − V characteristics of both diodes have an exceptional capacitance peak at forward bias, but not at reverse bias; and that the sign of negative capacitance has been not observed, which are appeared by other reasons than a mobile charge carrier redistribution in the semiconductor space charge region.…”

“…This approach can successfully explain usually anomalous behaviors observed in the I − V characteristics, such as a reduce of SBH and an increment in ideality factor due to decrease in temperature, the difference of SBH determined from different methods, the nonlinear Richardson activation curve. The other approach by Tung [65] and Sullivan [98,107,108] dominates at small bias and especially low temperature; and assumes the presence of somesmall patches withthe placed low SBH in the mean SBH area [72,73,103].…”

“…Therefore, some studies have also intensified on the nonideal I − V characteristics [17,21,[56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73]. There are many studies on the diode parameters as a function of the sample temperature [18,65,[74][75][76][77][78][79][80][81][82].…”

Farklı Metal/n-Si Kontakların Sayısal Olarak Modellenmesi ve Simülasyonu

“…Farklı yarıiletken alt taşlar kullanılarak, farklı metallerle yapılan metal-yarıiletken kontakların engel yüksekliği birçok çalışmada araştırılmıştır (Abdullah Akkaya, 2021;Ayyildiz et al, 1996;Kahveci, Akkaya, Ayyildiz, & Türüt, 2017;Keskin, Akkaya, Ayyıldız, Uygun Öksüz, & Özbay Karakuş, 2019;Tung, 2014) . Metal-yarıiletken kontakların engel yüksekliği birçok çalışmada araştırılmıştır (Abdullah Akkaya, 2021;Ayyildiz et al, 1996;Kahveci et al, 2017;Keskin et al, 2019;Tung, 2014). Farklı metaller ile yarıiletkenlerin oluşturacağı kontakların engel yüksekliği üzerinde oldukça önemli bir etkisi vardır.…”