2022
DOI: 10.1016/j.ijleo.2022.168749
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Investigation of the role of back contact work function for hole transporting layer free perovskite solar cells applications

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Cited by 26 publications
(13 citation statements)
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“…In this case, the increase in W f drives a stronger built‐in electric field, improving the driving forces of carrier migration along the perovskite layer (Figure 4c–f) due to a larger charge density of electrons and holes on the ETL and HTL, respectively. [ 93–95 ]…”
Section: General Architecture Of Solar Cellsmentioning
confidence: 99%
“…In this case, the increase in W f drives a stronger built‐in electric field, improving the driving forces of carrier migration along the perovskite layer (Figure 4c–f) due to a larger charge density of electrons and holes on the ETL and HTL, respectively. [ 93–95 ]…”
Section: General Architecture Of Solar Cellsmentioning
confidence: 99%
“…82,184 However, the V oc of these devices is still below 15%, which may result from the bad contact and/or the mismatched energy levels between the perovskite and the electrode. 182 A recent simulation study using SCAPS-1D software conducted by Singh et al 185 revealed that a PCE of more than 22% could be obtained via the use of a counter electrode with a work function of 5.4 eV or above. They further indicated that the bulk or interfacial defects considerably impact the device performances, where the V oc quickly decreases with the increase in the defect density.…”
Section: Future Prospectsmentioning
confidence: 99%
“…Considering the expensive cost of Au, and its easy diffusion into the perovskite layer, researchers are studying alternative electrodes such as carbon-based back contacts, which are known to be affordable as well as to provide good efficiency and long-term stability. , However, the V oc of these devices is still below 15%, which may result from the bad contact and/or the mismatched energy levels between the perovskite and the electrode . A recent simulation study using SCAPS-1D software conducted by Singh et al revealed that a PCE of more than 22% could be obtained via the use of a counter electrode with a work function of 5.4 eV or above. They further indicated that the bulk or interfacial defects considerably impact the device performances, where the V oc quickly decreases with the increase in the defect density.…”
Section: Future Prospectsmentioning
confidence: 99%
“…Similarly, Minemoto et al obeserved a 0.3 eV barrier height and Ghosh et al obeserved that a barrier height of 0.2 eV can effectively block the electrons. [49,50] S3d, Supporting Information indicates that the valence band of the Cs 2 SnI 6 absorber and the valence band of the Cu 2 O-HTL are aligned to allow the smooth hole transfer of charge carriers. On the other hand, the worst performing device in terms of VBO is CuSbS 2 having a VBO of 0.287 eV which reduces the efficient hole transfer to the electrode (FTO).…”
Section: Optimization Of Various Htl Materialsmentioning
confidence: 99%