Investigation of Defects in Cs₂SnI₆‐Based Double Perovskite Solar Cells Via SCAPS‐1D

Abstract

Effective conversion of solar photons into electrical power through the development of smart and eco‐friendly materials is one of the most extensively researched methods for generating renewable energy. In this work, an inorganic lead‐free double perovskite Cs2SnI6 material is employed as an active layer for solar cell applications, together with GO (graphene oxide) as electron transport layer (ETL) and Cu2O as hole transport layer (HTL). In order to find the most efficient photovoltaic device, a detailed theoretical study using the SCAPS‐1D simulation program is conducted. The device performance is monitored and analyzed by considering various HTLs, doping density in active layer, light intensity, ETL thickness, operating temperature, parasitic resistances, and the role of defects on device performance. The optimized device displays a power conversion efficiency of 23.64% with excellent photovoltaic characteristics. This theoretical study reveals that Cs2SnI6 can be a promising choice for solar cell applications as a lead‐free double perovskite material.

A Comprehensive Analysis of Eco‐Friendly Cs2SnI6 Based Tin Halide Perovskite Solar Cell through Device Modeling

“…The initial proposed structure has material parameters, which are listed in Table 2, layer defects in Table 3, and interfacial defects described in Table 4. All the essential parameters used in this theoretical study have been derived from existing literature as follows: FTO, [38] TiO 2 , [39] Cs 2 SnI 6 , [35,36,[40][41][42] and Cu 2 O. [43,44] Moreover the other material parameters used for ZnO, CdS, and P3HT in the simulation have been summarized in Table S1 of the Supporting Information.…”

“…An optimized FTO/graphene oxide/Cs 2 SnI 6 /Cu 2 O/Au configuration was employed to obtain maximum theoretical parameters of V OC = 0.837 V, J SC = 34.6 mA cm −2 , FF = 81.64%, and η = 23.64% considering a total 10 14 cm −3 defect density. [ 35 ] A solar cell utilizing the same architecture, at the same defect concentration was demonstrated to have an optimum V OC = 1.0 V, J SC = 25.93 mA cm −2 , FF = 29.57%, and η = 7.73%. [ 36 ] The discrepancies in theoretical results and experimental values should be tackled in order to gain an in‐depth understanding of the physics behind the operation of perovskite material based solar cells.…”

A Theoretical Study to Investigate the Impact of Bilayer Interfacial Modification in Perovskite Solar Cell

“…As doping concentration increases, built‐in potential ( V bi ) rises, and reverse saturation current decreases, so significant enhancement in V OC is observed in devices without bilayers ( Figure 5 ), which is mathematically justified by Equations (9), (12), and (14). [ 23,36 ] This improved V bi also resulted in directional charge transport and lower recombinations. Built‐in potential and I 0 can be expressed as…”

Solution-processed next generation thin film solar cells for indoor light applications

“…53 The presence of bulk, as well as surface defects inside a solar device, plays a crucial role in solar cell efficiency. 54 discharge lamp with a semiconductor having bandgap 2.10 eV. 12 The upper PCE limit for fluorescent tube and sodium lamp were observed to be 46% and 67% respectively.…”

“…53 The presence of bulk, as well as surface defects inside a solar device, plays a crucial role in solar cell efficiency. 54 While bulk defects mainly contribute toward SRH or trap-assisted recombination, excess surface defects deteriorate solar cell performance by hampering the collection carriers. Ryu et al observed a diminishing of charge carrier trapping due to defects while increasing the intensity of light from 0.01 sun to 1 sun conditions while using MAPbI 3 -based solar cells.…”